y Asi Es

IPB06N03LA
IPI06N03LA, IPP06N03LA
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
•Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol ConditionsUnit
Continuous drain current I D T C=25 °C1) 50 A
T C=100 °C 50
Pulsed drain current I D,pulse T C=25 °C2) 350
Avalanche energy, single pulse EAS I D=45 A, RGS=25 Ω 225 mJ
Reverse diode dv /dt dv/dt
I D=50 A, VDS=20 V,
di /dt =200 A/μs,
T j,max=175 °C
6 kV/μs
Gate source voltage3) VGS ±20 V
Power dissipation Ptot T C=25 °C 83 W
Operating and storage temperature T j, T stg -55 ... 175 °CIEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 25 V
RDS(on),max (SMD version) 5.9 mΩ
I D 50 A
Product Summary
Type Package Ordering Code Marking
IPB06N03LA P-TO263-3-2 Q67042-S414606N03LA
IPI06N03LA P-TO262-3-1 Q67042-S4147 06N03LA
IPP06N03LA P-TO220-3-1 Q67042-S4148 06N03LA
P-TO263-3-2 P-TO262-3-1 P-TO220-3-1
Rev. 1.3 page 1 2003-12-18
IPB06N03LA
IPI06N03LA, IPP06N03LAParameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.8 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2cooling area4) - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, I D=1 mA 25 - - V
Gate thresholdvoltage VGS(th) VDS=VGS, I D=40 μA 1.2 1.6 2
Zero gate voltage drain current I DSS
VDS=25 V, VGS=0 V,
T j=25 °C - 0.1 1 μA
VDS=25 V, VGS=0 V,
T j=125 °C - 10 100
Gate-source leakage current I GSSVGS=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, I D=30 A - 7.9 9.9 mΩ
VGS=4.5 V, I D=30 A,
SMD version
- 7.6 9.5
VGS=10 V, I D=30 A - 5.2 6.2
VGS=10 V, I D=30 A,...