4N35

4N35, 4N36, 4N37 OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS

D D D D D D

Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio High-Voltage Electrical Isolation 1.5-kV, 2.5-kV, or 3.55-kV Rating High-Speed Switching tr = 7 µs, tf = 7 µs Typical TypicalApplications Include Remote Terminal Isolation, SCR and Triac Triggers, Mechanical Relays and Pulse Transformers Safety Regulatory Approval UL/CUL, File No. E65085

DCJ† OR 6-TERMINAL DUAL-IN-LINE PACKAGE (TOP VIEW)

ANODE CATHODE NC

1 2 3

6 5 4

BASE COLLECTOR EMITTER

†4N35 only NC – No internal connection

schematic
ANODE CATHODE NC EMITTER BASE COLLECTOR

absolute maximumratings at 25°C free-air temperature (unless otherwise noted)†
Input-to-output peak voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 kV 4N36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV 4N37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV Input-to-output root-mean-squarevoltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV 4N36 . . . . . . . . . . . . . . . . . . . . . . . . 1.75 kV 4N37 . . . . . . . . . . . . . . . . . . . . . . . . 1.05 kV Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 VCollector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Input-diode forward current: Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA Peak (1 µs, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Phototransistor continuous collector current . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Continuous total power dissipation at (or below) 25°C free-air temperature: Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Continuous power dissipation at (or below) 25°C lead temperature: Infrared-emitting diode (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Phototransistor (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . 500 mW Operating temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 100°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. This value applies when the...