Qn2222

DATA SHEET

2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for smallsignal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation PowerDissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ,Tstg 75 40 6.0 800 400 1.2 -65 to +200 438 146 UNITS V V V mA mW W °C°C/W °C/W

ΘJA

ΘJC

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2221A SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=60V, TA=150°C 10 IEBO VEB=3.0V 10 ICEV VCE=60V,VEB=3.0V 10 BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE hFE IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V,IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=10mA, TA=-55°C VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA 75 40 6.0 0.3 1.0 1.2 2.0

2N2222A MIN MAX 10 10 10 10 75 40 6.0 0.3 1.0 1.22.0

UNITS nA µA nA nA V V V V V V V

0.6 20 25 35 15 40 20 25 (Continued)

0.6 35 50 75 35 100 50 40

120

300

R2

2N2221A / 2N2222A
ELECTRICAL CHARACTERISTICS: Continued SYMBOL fTCob Cib hie hie hre hre hfe hfe hoe hoe rb'Cc NF td tr ts tf TEST CONDITIONS VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA,f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHzVCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA 2N2221A MIN MAX 250...