Esquemas De Manejo De Cargas

MOC3031M, MOC3032M, MOC3033M,
MOC3041M, MOC3042M, MOC3043M
6-Pin DIP Zero-Cross Optoisolators Triac Driver Output
(250/400 Volt Peak)
Features

Description

■ Simplifies logic control of 115 VAC power

The MOC303XM and MOC304XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossingbilateral triac driver.

■ Zero voltage crossing
■ dv/dt of 2000 V/µs typical, 1000 V/µs guaranteed
■ VDE recognized (File # 94766), ordering option V

(e.g., MOC3043VM)

Applications
■ Solenoid/valve controls
■ Lighting controls

They are designed for use with a triac in the interface of
logic systems to equipment powered from 115 VAC
lines, such as teletypewriters, CRTs, solid-staterelays,
industrial controls, printers, motors, solenoids and
consumer appliances, etc.

■ Static power switches
■ AC motor drives
■ Temperature controls
■ E.M. contactors
■ AC motor starters
■ Solid state relays

Schematic

Package Outlines

ANODE 1

6 MAIN TERM.

CATHODE 2

N/C 3

5 NC*
ZERO
CROSSING
CIRCUIT

4 MAIN TERM.

*DO NOT CONNECT
(TRIAC SUBSTRATE)

©2005Fairchild Semiconductor Corporation
MOC303XM, MOC304XM Rev. 1.0.7

www.fairchildsemi.com

MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (250/400 Volt Peak)

September 2010

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to theselevels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol

Parameters

Device

Value

Units

TOTAL DEVICE
TSTG

Storage Temperature

All

-40 to +150

°C

TOPR

Operating Temperature

All

-40 to +85

°C

TSOL

LeadSolder Temperature

All

260 for 10
sec

°C

Junction Temperature Range

All

-40 to +100

°C

Isolation
(peak AC voltage, 60Hz, 1 sec. duration, II-O ≤ 2µA)

All

7500

Vac(pk)

Total Device Power Dissipation @ 25°C

All

250

mW

2.94

mW/°C

TJ
VISO
PD

Surge Voltage(1)

Derate above 25°C
EMITTER
IF

Continuous Forward Current

All

60

mAVR

Reverse Voltage

All

6

V

PD

Total Power Dissipation 25°C Ambient

All

120

mW

1.41

mW/°C

MOC3031M/2M/3M

250

V

MOC3041M/2M/3M

400

Peak Repetitive Surge Current
(PW = 100µs, 120 pps)

All

1

A

Total Power Dissipation @ 25°C Ambient

All

150

mW

All

1.76

mW/°C

Derate above 25°C
DETECTOR
VDRM
ITSM
PD

Off-StateOutput Terminal Voltage

Derate above 25°C

Note
1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.

©2005 Fairchild Semiconductor Corporation
MOC303XM, MOC304XM Rev. 1.0.7

2

www.fairchildsemi.com

MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output(250/400 Volt Peak)

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Individual Component Characteristics
Symbol

Parameters

Test Conditions

Device

Min.

Typ.

Max.

Units

EMITTER
VF

Input Forward Voltage

IF = 30mA

All

1.25

1.5

V

IR

Reverse Leakage Current

VR = 6V

All

0.01

100

µA

IDRM1

Peak Blocking Current,
EitherDirection

Rated VDRM, IF = 0(2)

All

100

nA

VTM

Peak On-State Voltage,
Either Direction

ITM = 100mA peak, IF = 0

All

3

V

dv/dt

Critical Rate of Rise of
Off-State Voltage

IF = 0 (Figure 9)(4)

All

DETECTOR

1.8
1000

V/µs

Transfer Characteristics
Symbol

Test Conditions
Main Terminal
Voltage = 3V(3)

Holding Current,
Either Direction...