Bc8854

®

BC547B BC547C
SMALL SIGNAL NPN TRANSISTORS

Type BC547B BC547C
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Marking BC547B BC547C

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SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCBASSEMBLY BC547B - THE PNP COMPLEMENTARY TYPE IS BC557B TO-92

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APPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATIONVOLTAGE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0)Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Value 50 45 6 100 200 500 -65 to 150 150 UnitV V V mA mA mW
o o

C C

January 2003

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BC547B / BC547C
THERMAL DATA
R thj-amb • Thermal Resistance Junction-Ambient R thj-Case • Thermal Resistance Junction-Case Max Max 250 83.3
o oC/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test ConditionsV CB = 30 V V CB = 30 V V EB = 5 V I C = 10 mA 45 T C = 150 o C Min. Typ. Max. 15 5 100 Unit nA µA nA V

V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ V BE(on) ∗h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain

I C = 10 mA I C = 100 mA I C = 10 mA I C = 100 mA I C = 2 mA I C = 10 mA I C = 2mA for BC547B for BC547C

I B = 0.5 mA I B = 5 mA I B = 0.5 mA I B = 5 mA V CE = 5 V V CE = 5 V V CE = 5 V 200 420 100 0.58

0.09 0.2 0.7 0.9 0.66

0.25 0.6

V V V V

0.7 0.77 450 800

V VfT C CBO C EBO NF

Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure

I C = 10 mA V CE = 5 V f = 100MHz IE = 0 IC = 0 V CB = 10 V V EB = 0.5 V f = 1 MHz f...