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Technical Data Sheet 5mm Phototransistor T-1 3/4
PT331C
Features
․Fast response time ․High photo sensitivity ․Pb free

Descriptions
․PT331C is a high speed and high sensitive silicon NPNepitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive to visible and near infrared radiation.

Applications
․Infrared applied system ․Floppy diskdrive ․Optoelectronic switch

Device Selection Guide LED Part No.
PT

Chip Material
Silicon

Lens Color
Water Clear

Everlight Electronics Co., Ltd. Device No：DPT-033-001http:\\www.everlight.com Prepared date：07-19-2004

Rev 1.3

Page: 1 of 7

Prepared by：Jaine Tsai

PT331C
Package Dimensions

Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions±0.25mm

Absolute Maximum Ratings (Ta=25℃)
Parameter Collector-Emitter Voltage Emitter-Collector-Voltage Collector Current Operating Temperature Storage Temperature Lead Soldering Temperature PowerDissipation at (or below) 25℃ Free Air Temperature Symbol VCEO VECO IC Topr Tstg Tsol Pc Rating 30 5 20 -25 ~ +85℃ -40 ~ +85℃ 260 75 Units V V mA ℃ ℃ ℃ mW

Notes: *1:Soldering time≦5 seconds.Everlight Electronics Co., Ltd. Device No：DPT-033-001

http:\\www.everlight.com Prepared date：07-19-2004

Rev 1.3

Page: 2 of 7

Prepared by：Jaine Tsai

PT331C
Electro-Optical Characteristics(Ta=25℃)
Parameter Collector – Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector CurrentWavelength of Peak Sensitivity Rang of Spectral Bandwidth Symbol BVCEO Condition IC=100μA Ee=0mW/cm2 Min. 30 5 --------0.7 ----Typ. ------15 15 --2.5 940 400-1100 Max. ----0.4 ----100 ------nA mA nm nmUnits V V V μS

IE=100μA BVECO Ee=0mW/cm2 IC=2mA VCE)(sat) Ee=1mW/cm2 tr tf ICEO IC(on) λp λ0.5 VCE=5V IC=mA RL=1000Ω Ee=0mW/cm2 VCE=20V Ee=1mW/cm2 VCE=5V -----

Rankings Parameter G H J K L...