Diodo

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

Discrete POWER & Signal Technologies

PN2222A

MMBT2222A
C

PZT2222A
C

E C BE

E C B

TO-92 SOT-23
Mark: 1P

B

SOT-223

MMPQ2222
E B E B E B

NMT2222
C2 E1 C1

E

B

SOIC-16

C

C

C

C

C

C

C

C B2 E2

SOT-6
Mark: .1B

B1

NPN General Purpose Amplifier
This device is for use as amedium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
40 75 6.0 1.0 -55 to +150

Units
V V V A °C

Operating and StorageJunction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

© 1997 Fairchild Semiconductor CorporationPN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown VoltageCollector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current I C = 10 mA, IB = 0 I C = 10 µA, IE = 0 I E = 10 µA, I C = 0 VCE = 60 V, VEB(OFF) = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, I E = 0, TA = 150°C VEB = 3.0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V 40 75 6.0 10 0.01 10 10 20 V V V nA µA µA nA nA

ON CHARACTERISTICS
hFE DC Current Gain I C = 0.1 mA, VCE = 10 V I C= 1.0 mA, VCE = 10 V I C = 10 mA, VCE = 10 V I C = 10 mA, VCE = 10 V, TA = -55°C I C = 150 mA, VCE = 10 V* I C = 150 mA, VCE = 1.0 V* I C = 500 mA, VCE = 10 V* I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 150 mA, IB = 1.0 mA I C = 500 mA, IB = 5.0 mA
(except MMPQ2222 and NMT2222)

35 50 75 35 100 50 40

300

VCE(sat ) VBE( sat)

Collector-Emitter Saturation Voltage*Base-Emitter Saturation Voltage*

0.6

0.3 1.0 1.2 2.0

V V V V

SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo rb’CC NF Re(hie) Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance

IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC= 20 mA, VCB = 20 V, f = 31.8 MHz IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz

300 8.0 25 150 4.0 60

MHz pF pF pS dB Ω

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time

(except MMPQ2222 and NMT2222)

VCC = 30 V, VBE(OFF) = 0.5 V, I C = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15 mA

10 25225 60

ns ns ns ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General PurposeAmplifier
(continued)

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2222A 625 5.0 83.3 200

Max
*PZT2222A 1,000 8.0 125

Units
mW mW/°C °C/W °C/W

Symbol
PD RθJA

Characteristic
Total Device Dissipation...