Enf. Pro

Ordering number:5794

NPN Triple Diffused Planar Silicon Transistor

2SD2578
Color TV Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode.

Package Dimensions
unit:mm 2039D
[2SD2578]
3.4 16.0 5.6 3.1

5.0 8.0 21.0 22.0

2.8 2.04.0

2.0

20.4

1.0

0.6

2.0
1 2 3

1:Base 2:Collector 3:Emitter SANYO:TO3PML

5.45

Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚CConditions

3.5
5.45

Ratings 1500 800 6 8 20 3.0 60 150 –55 to +150

Unit V V V A A W W
˚C ˚C

Tj Tstg

Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800 40 130 Conditons Ratings min typ max 10 1.0 Unit µA mA V mA

VCEO(sus) IC=100mA,IB=0 IEBO VEB=4V, IC=0

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYOproducts described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3098TS (KOTO) TA-1135 No.5794-1/4

2SD2578
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time Symbol VCE(sat) VBE(sat)hFE1 hFE2 tf IC=5A, IB=1A IC=5A, IB=1A VCE=5V, IC=1A VCE=5V, IC=5A IC=4A, IB1=0.8A, IB2=–1.6A 15 5 Conditons Ratings min typ max 5 1.5 30 8 0.3 µs Unit V V

Switching Time Test Circuit
PW=20µs DC≤1% INPUT RB VR 50Ω + 100µF VBE=–2V + 470µF VCC=200V RL=50Ω IB1 IB2 OUTPUT

8 7

I C - VCE
6A 1.8A 1.4A 1.
2.0A

9 8
1.2A 1.0A 0.8A 0.6A
0.4A

I C - VBE
VCE = 5V

Collector Current, IC– A

6 5 4 3 2 1 0 0

Collector Current, IC – A

7 6 5 4 3 2 1

1

2

3

4

5

6

7

8

IB = 0 9 10

0 0

0.2

0.4

0.6

Ta =

0.2A

120 ˚C 25˚C - 40˚ C
0.8 1.0

1.2

1.4

Collector-to-Emitter Voltage, VCE – V
5 3

Base-to-Emitter Voltage, VBE – V
7 IC / IB = 5 5

hFE - I C
VCE =5V
Ta = ˚C 120
25˚ C
˚C

VCE(sat) - I C

Collector–to–EmitterSaturation Voltage, VCE (sat) –V

3 2 1.0 7 5 3 2

DC Current Gain, hFE

2

10 7 5 3 2

- 40

Ta= -40˚C
0.1 7 5 3

25˚C
120˚C
7 0.1 2 3 5 7 1.0 2 3 5 7 10

1.0 7 7 0.1 2 3 5 7 1.0 2 3 5 7 10

Collector Current, IC – A

Collector Current, IC – A

No.5794-2/4

2SD2578
7 5

SW Time - I C
t stg

10 7

SW Time - I B2
VCC = 200V IC =4A IB1 =0.8A R load
gSwitching Time, SW Time – µs

Switching Time, SW Time – µs

3 2

5 3 2 1.0 7 5 3 2 0.1 7 7 0.1

t st

1.0 7 5 3 2 VCC =200V

tf

tf

IC / IB1 =5 0.1 IB2 / IB1 =2 R load
7 7 0.1 2 3 5 7 1.0 2 3 5 7 10

2

3

5

7

1.0

2

3

5

7

Collector Current, IC – A
5 3 I 2 CP

Base Current, IB2 – A
5 3 2

Forward Bias A S O
µs 00 =1 s PT 0µ 30

Reverse Bias A S O...