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Tarea #11
IGBT´s

The insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch and in newerdevices is noted for combining high efficiency and fast switching. It switches electric power in many modern appliances: variable-frequency drives (VFDs), electric cars, trains, variable speedrefrigerators, air-conditioners and even stereo systems with switching amplifiers. Since it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex waveforms with pulse widthmodulation and low-pass filters. In switching applications modern devices boast pulse repetition rates well into the ultrasonic range—frequencies which are at least ten times the highest audiofrequency handled by the device when used as an analog audio amplifier.

The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low-saturation-voltage capability ofbipolar transistors. The IGBT combines an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The IGBT is used in medium- to high-powerapplications like switched-mode power supplies, traction motor control and induction heating. Large IGBT modules typically consist of many devices in parallel and can have very high current handlingcapabilities in the order of hundreds of amperes with blocking voltages of 6000 V, equating to hundreds of kilowatts.
Componente electrónico diseñado para controlar principalmente altas potencias, en su diseñoestá compuesto por un transistor bipolar de unión BJT y transistor de efecto de campo de metal oxido semiconductor MOSFET.


Estructura:
El IGBT es un dispositivo semiconductor de cuatro capas quese alternan (PNPN) que son controlados por un metal-óxido-semiconductor (MOS), estructura de la puerta sin una acción regenerativa. Un transistor bipolar de puerta aislada (IGBT) celular se...