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Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS918 15 30 3.050 350 2.8 0.85 6.8 –55 to +150 MPS3563 12 30 2.0 Unit Vdc Vdc Vdc mAdc

MPS918* MPS3563
*ON Semiconductor Preferred Device

1

mW mW/°C Watts mW/°C °C

2

3

CASE 29–10, STYLE 1 TO–92 (TO–226AL)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 357 147 Unit °C/W °C/W 2 BASE

COLLECTOR 31 EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2) (IC = 3.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO MPS918MPS3563 V(BR)CBO MPS918 MPS3563 V(BR)EBO MPS918 MPS3563 ICBO MPS918 MPS3563 — — 10 50 3.0 2.0 — — nAdc 30 30 — — Vdc 15 12 — — Vdc Vdc

1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 1.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

© SemiconductorComponents Industries, LLC, 2001

1

November, 2001 – Rev. 2

Publication Order Number: MPS918/D

MPS918 MPS3563
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(2) (IC = 3.0 mAdc, VCE = 1.0 Vdc) (IC = 8.0 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE MPS918 MPS3563 VCE(sat) MPS918 VBE(sat) MPS918 — 1.0 Vdc 20 20 — — 200 0.4 Vdc —

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2) (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 kΩ, f = 60 MHz) fT MPS918 MPS3563 Cobo MPS918 MPS918 MPS3563 Cibo MPS918 hfe MPS3563 NF MPS918 — 6.0 dB 20 250 — — — — — 3.0 1.7 1.7 2.0 pF 600 600 — 1500 pF MHz

FUNCTIONAL TEST
Common–EmitterAmplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz) (Gfd + Gre t –20 dB) Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Oscillator Collector Efficiency (IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz) 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 1.0%. Gpe MPS918 MPS3563 Pout MPS918 η MPS918 25 — % 15 14 30 — — — mW dBhttp://onsemi.com
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MPS918 MPS3563
PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–10 ISSUE AL
A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION KMINIMUM. DIM A B C D F G H J K L N P R TYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 ---

R P F L

B...