Datedhip 4n26

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 4N25/D

GlobalOptoisolator™

6-Pin DIP Optoisolators Transistor Output
The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets orExceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • I/O Interfacing • Solid State Relays MAXIMUM RATINGS (TA = 25°C unlessotherwise noted)
Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICEIsolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 7 70 150 150 1.76 Volts Volts Volts mA mW mW/°CVR IF PD 3 60 120 1.41 Volts mA mW mW/°C 1 2 3 Symbol Value Unit

4N25 * 4N25A* 4N26 * 4N27 4N28
[CTR = 20% Min] [CTR = 10% Min] *Motorola Preferred Devices

STYLE 1 PLASTIC

6

1

STANDARD THRU HOLE CASE 730A–04

SCHEMATIC

6 5 4 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE

1. Isolation surge voltage is an internal device dielectric breakdown rating.1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc. REV 5

Motorola Optoelectronics Device Data © Motorola, Inc. 1995

1

4N254N25A 4N26 4N27 4N28
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic INPUT LED Forward Voltage (IF = 10 mA) TA = 25°C TA = –55°C TA = 100°C VF — — — — — 1.15 1.3 1.05 — 18 1.5 — — 100 — Volts Symbol Min Typ(1) Max Unit

Reverse Leakage Current (VR = 3 V) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C (VCE= 10 V, TA = 100°C) Collector–Base Dark Current (VCB = 10 V) Collector–Emitter Breakdown Voltage (IC = 1 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Emitter–Collector Breakdown Voltage (IE = 100 µA) DC Current Gain (IC = 2 mA, VCE = 5 V) Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) Collector–Base Capacitance (f = 1 MHz, VCB = 0) Emitter–Base Capacitance (f = 1 MHz, VEB = 0) COUPLEDOutput Collector Current (IF = 10 mA, VCE = 10 V) 4N25,25A,26 4N27,28 Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA) Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Isolation Voltage (f = 60 Hz, t = 1 sec)(4) IsolationResistance (V = 500 V)(4) Isolation Capacitance (V = 0 V, f = 1 MHz)(4) 1. 2. 3. 4. 4N25,25A,26,27 4N28 All Devices

IR CJ

µA pF

ICEO ICEO ICBO V(BR)CEO V(BR)CBO V(BR)ECO hFE CCE CCB CEB IC (CTR)(2)

— — — — 30 70 7 — — — —

1 1 1 0.2 45 100 7.8 500 7 19 9

50 100 — — — — — — — — —

nA µA nA Volts Volts Volts — pF pF pF

mA (%) 2 (20) 1 (10) 7 (70) 5 (50) 0.15 2.8 4.5 1.2 1.3 — — 0.2 —...