Diodo

diodos1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES

Features
Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glasscase DO-34.

D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in. 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te

Electrical Characteristics
Type Peak reverse voltage VRM V 1N914 1N4149
1)

Max. aver. rectifiedcurrent IO mA 75 150 200 150 150 150
2)

Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400

Max. junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175175

Max. forward voltage drop

Max. reverse current

Max. reverse recovery time

VF V 1.0 1.0 1.0 0.55 0.55 1.0 1.0 1.0 0.54 0.50 0.55 1.0

at IF mA 10 10 200 0.10 0.10 0.10 20 30 0.50 0.100.01 10

In nA 25 25 100 50 50 100 25 25 50 50 50 100

at VR V 20 20 50 30 50 25 20 20 30 30 20 50

trr nS Max. 4.0 Max. 4.0 Max. 4.0 Max. 2.0 Max. 2.0 Max. 2.0 Max. 4.0 Max. 4.0 Max. 4.0 Max. 10Max. 4.0

Conditions IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 , to IR=1mA , to IR=1mA

100 100 50 40 75 35 100 100 40 40 30 75

1N4150 1N4152 1N4153 1N4154 1N4447 1N4449
1) 1)

IF=IR=10to 200 mA, to 0.1 IF IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=IR=10mA, to IR=1mA IF=IR=10mA, to IR=1mA IF=IR=10mA, toIR=1mA , to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA

150 150 150 150 150 150

1N4450 1N4451 1N4453 1N4454

Notes: (1) These diodes are also avaiable in glass case DO-34 (2) Validprovided that leads at a distance of 8 mm from case are kept at ambient temperature Parameters for diodes in case DO-34: Ptot=300mW TS=-65 to +175 TJ=175 Rtha 0.4K/mW

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