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2N2905 2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907)metal case. They are designed for high speed saturated switching and general purpose application. 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P t ot Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0)Collector Current Total Dissipation at T amb ≤ 25 C for 2N2905 for 2N2907 at T case ≤ 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature
o

Value -60 -40 -5 -0.60.6 0.4 3 1.8 -65 to 200 200

Unit V V V A W W W W
o o

T stg Tj

C C 1/5

November 1997

2N2905/2N2907
THERMAL DATA
T O-39 R t hj-ca se R t hj- amb Thermal Resistance Junction-CaseThermal Resistance Junction-Ambient Max Max 58.3 292 TO -18 97.3 437.5
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO I CEX I BEX ParameterCollector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5V) Base Cut-off Current (V BE = -0.5V) Test Cond ition s V CB = -50 V V CB = -50 V V CE = -30 V V CE = -30 V I C = -10 µA -60 Tc ase =150 C
o

Min.

Typ .

Max. -20 -20 -50 -50

Un it nA µA nA nA V

V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V(BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ V BE(s at)∗ hFE∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain

I C = -10 mA

-40

V

I E = -10µA

-5

V

I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA IC IC IC IC IC = = = = = -0.1 mA -1 mA -10 mA -150 mA -500 mA

IB = -15 mA IB = -50 mA IB = -15 mA IB = -50 mA V CE = -10...
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