Gtrgrg

PN2222A / MMBT2222A / PZT2222A

PN2222A

MMBT2222A
C

PZT2222A
C

E C B

E C B

TO-92
E

SOT-23
Mark: 1P

B

SOT-223

NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter VoltageCollector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
40 75 6.0 1.0 -55 to +150

Units
V V V A °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junctiontemperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2222A 625 5.083.3 200

Max
*MMBT2222A 350 2.8 357 **PZT2222A 1,000 8.0 125

Units
mW mW/°C °C/W °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

 1998 Fairchild Semiconductor Corporation

PN2222A / MMBT2222A / PZT2222A

NPN General Purpose Amplifier
(continued)

ElectricalCharacteristics
Symbol Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0IE = 10 µA, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 3.0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V 40 75 6.0 10 0.01 10 10 20 V V V nA µA µA nA nA

ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC =500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 35 100 50 40

300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage*

0.6

0.3 1.0 1.2 2.0

V V V V

SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo rb’CC NF Re(hie) Current Gain - Bandwidth Product Output Capacitance InputCapacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance IC= 20 mA, VCE= 20 V, f= 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC= 20 mA, VCB= 20 V, f= 31.8 MHz IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz 300 8.0 25 150 4.0 60 MHz pF pF pS dB Ω

SWITCHING CHARACTERISTICStd tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 10 25 225 60 ns ns ns ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)

PN2222A / MMBT2222A / PZT2222A

NPN General Purpose Amplifier
(continued)

Typical Characteristics

500
V CE = 5V

V CESAT - COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current

Collector-Emitter Saturation Voltage vs Collector Current...