Hoja de datos del tip32

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TIP32 Series(TIP32/32A/32B/32C)

TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C

1

TO-220 2.Collector 3.Emitter

1.Base

PNPEpitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : TIP32 : TIP32A : TIP32B : TIP32C Value - 40 - 60 - 80 - 100 - 40- 60 - 80 -100 -5 -3 -5 -3 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C

VCEO

Collector-Emitter Voltage : TIP32 : TIP32A : TIP32B : TIP32C Emitter-Base Voltage Collector Current(DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC PC TJ TSTG

ElectricalCharacteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP32 : TIP32A : TIP32B : TIP32C Collector Cut-off Current : TIP32/32A : TIP32B/32CCollector Cut-off Current : TIP32 : TIP32A : TIP32B : TIP32C IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation VoltageCurrent Gain Bandwidth Product VCE = - 40V, VEB = 0 VCE = - 60V, VEB = 0 VCE = - 80V, VEB = 0 VCE = - 100V, VCE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = -375mA VCE = - 4V, IC = - 3A VCE = - 10V, IC = - 500mA 3.0 25 10 - 200 - 200 - 200 - 200 -1 50 - 1.2 - 1.8 V V MHz
Rev. A, February 2000

Test Condition IC = - 30mA, IB = 0

Min. -40 -60 -80 -100Max.

Units V V V V

ICEO

VCE = - 30V, IB = 0 VCE = - 60V, IB = 0

- 0.3 - 0.3

mA mA µA µA µA µA mA

ICES

* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild SemiconductorInternational

TIP32 Series(TIP32/32A/32B/32C)

Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000

-10000

VCE = -4V

IC /IB = 10

hFE, DC CURRENT GAIN

100

-1000...
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