Idiotas
TIP31 Series(TIP31/31A/31B/31C)
Medium Power Linear Switching Applications
• Complementary to TIP32/32A/32B/32C
TO-220
1
1.Base
NPN Epitaxial SiliconTransistor
2.Collector
3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: TIP31
: TIP31A
: TIP31B
: TIP31C
Value40
60
80
100
Units
V
V
V
V
40
60
80
100
V
V
V
V
V
VCEO
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
VEBO
Emitter-Base Voltage
5
ICCollector Current (DC)
3
A
ICP
Collector Current (Pulse)
5
A
IB
Base Current
PC
Collector Dissipation (TC=25°C)
1
A
40
W
PC
Collector Dissipation (Ta=25°C)2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICESParameter
* Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
Test Condition
IC = 30mA, IB = 0
Min.
Max.40
60
80
100
Units
V
V
V
V
VCE = 30V, IB = 0
VCE = 60V, IB = 0
0.3
0.3
mA
mA
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
200
200
200200
µA
µA
µA
µA
1
mA
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE
* DC Current Gain
VCE = 4V, IC= 1A
VCE = 4V, IC = 3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 375mA
1.2
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = 4V, IC = 3A
1.8
V
fTCurrent Gain Bandwidth Product
VCE = 10V, IC = 500mA
25
10
3.0
50
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
Rev. A, February...
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