Ingeniero

WTE
POWER SEMICONDUCTORS

1N4001 – 1N4007

Pb

1.0A STANDARD DIODE
Features
! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge CurrentCapability A B A

Mechanical Data
! ! ! ! ! ! ! Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.35 grams (approx.)Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 D
DO-41 Dim Min Max 25.4 — A 4.06 5.21 B 0.71 0.864 C 2.00 2.72 D AllDimensions in mm

C

Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N 4001 50 35

@TA=25°Cunless otherwise specified

Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°CNon-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 1.0A @TA = 25°C @TA =100°C

Symbol VRRM VRWM VR VR(RMS) IO

1N 4002 100 70

1N 4003 200 140

1N 4004 400 280 1.0

1N 4005 600 420

1N 4006 800 560

1N 4007 1000 700

Unit

V V A

IFSM VFM IRM Cj R
JATj TSTG

30 1.0 5.0 50 15 50 -65 to +125 -65 to +150

A V µA pF °C/W °C °C

Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient (Note 1) Operating TemperatureRange Storage Temperature Range

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1N4001 –1N4007

1 of 4

© 2006 Won-Top Electronics





I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A)

1.0
IF, INSTANTANEOUS FORWARD CURRENT (A)

10

0.8

1.0

0.6

0.4

0.1

0.2

Tj =...