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BC557B
SMALL SIGNAL PNP TRANSISTOR

Type BC557B
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Marking BC557B

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SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPNCOMPLEMENTARY TYPE IS BC547B

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APPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE

TO-92

INTERNAL SCHEMATICDIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0)Collector Current Collector Peak Current Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Value -50 -45 -5 -100 -200 500 -65 to 150 150 Unit V V V mA mA mW
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CC

January 2003

1/4

BC557B
THERMAL DATA
R thj-amb • Thermal Resistance Junction-Ambient R thj-Case • Thermal Resistance Junction-Case Max Max 250 83.3
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C/W C/W

ELECTRICALCHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -30 V V CB = -30 V V EB =-5 V I C = -10 mA -45 T C = 150 o C Min. Typ. -1 Max. -15 -4 -100 Unit nA µA nA V

V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ V BE(on) ∗ h FE fT C CBO C EBO NFCollector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure

IC = -10 mA I C = -100 mA I C = -10 mA I C = -100 mA I C = -2 mA I C = -10 mA I C = -2 mA IE = 0 IC = 0

I B = -0.5 mA I B = -5 mA I B = -0.5 mA I B = -5 mA V CE = -5 V V CE = -5 V V CE = -5 V f = 1MHz f = 1 MHz f = 1KHz -0.6 220 100

-0.06 0.18 -0.75 -0.93 -0.65

-0.3 -0.65

V V V V

-0.75 -0.82 475

V V

I C = -10 mA V CE = -5 V f = 100MHz V CB = -10 V V EB = -0.5 V

MHz 3 10...
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