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2SK30ATM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK30ATM
Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
·· · High breakdown voltage: VGDS = −50 V High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Low noise: NF = 0.5dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz) Unit: mm

Maximum Ratings(Ta = 25°C)
Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 100 125 -55~125 Unit V mAmW °C °C

JEDEC JEITA TOSHIBA

TO-92 SC-43 2-5F1C

Weight: 0.21 g (typ.)

Electrical Characteristics (Ta = 25°C)
Characteristics Gate cut-off current Gate-drain breakdown voltage Drain currentGate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure Symbol IGSS V (BR) GDS IDSS (Note) VGS (OFF) ïYfsï Ciss Crss NF Test Condition VGS= -30 V, VDS = 0 VDS = 0, IG = -100 mA VDS = 10 V, VGS = 0 VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VGS = 0, VDS = 0, f = 1 MHz VGD = -10 V, VDS = 0, f = 1 MHz VDS = 15 V, VGS = 0 RG =100 kW, f = 120 Hz Min ¾ -50 0.3 -0.4 1.2 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 8.2 2.6 0.5 Max -1.0 ¾ 6.5 -5.0 ¾ ¾ ¾ 5.0 Unit nA V mA V mS pF pF dB

Note: IDSS classification

R: 0.30~0.75, O: 0.60~1.40, Y:1.20~3.00, GR: 2.60~6.50

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RESTRICTIONS ON PRODUCT USE

000707EAA

· TOSHIBA is continually working toimprove the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a...