Simulacion en matlab

C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS

Central

TM

Semiconductor Corp.

DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPNsensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, remote warningand triggering applications. MARKING CODE: FULL PART NUMBER

TO-126 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C)Peak Non-Repetitive Surge Current (TJ=110°C) I2t Value for Fusing (t=8.3ms) Peak Gate Power (TC=80°C) Average Gate Power (TC=80°C) Peak Forward Gate Current (TC=80°C) Storage Temperature JunctionTemperature Thermal Resistance Thermal Resistance VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IGFM Tstg TJ ΘJC ΘJA

C106B 200

C106D 400 4.0 20 1.65 0.5 0.1 0.2

C106M 600

UNITS V A A A2 s W W A °C °C°C/W °C/W

-40 to +150 -40 to +110 3.0 75

SYMBOL IDRM, IDRM, VTM IGT IGT VGT VGT IH IH IH IL IL dv/dt

ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) TEST CONDITIONS MIN IRRMIRRM Rated VDRM, Rated VDRM, VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TJ=110°C

TYP

MAX 10 100 2.2 200 500

UNITS µA µA V µA µA V V mA mA mA mA mA V/µs

IFM=4.0A VAK=6.0V, RL=100Ω VAK=6.0V, RL=100Ω, TJ=-40°C VAK=6.0V, RL=100Ω VAK=6.0V, RL=100Ω, TJ= -40°C VD=12V VD=12V, TJ= -40°C VD=12V, TJ=110°C VD=12V VD=12V, TJ= -40°C VD= Rated VDRM, RGK=1KΩ, TJ=110°C

0.4 0.5

0.8 1.0 3.0 6.0 2.0 5.0 7.0 8.0R0 (27-April 2004)

Central

TM

Semiconductor Corp.

C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS

TO-126 CASE - MECHANICAL OUTLINE

LEAD CODE: 1)CATHODE 2) ANODE 3) GATE MARKING CODE: FULL PART NUMBER

DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.094 0.110 2.40 2.80 B 0.050 1.27 C 0.015 0.030 0.38 0.75 D 0.291 0.335 7.40 8.50...