Tip3055

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TIP2955 TIP3055

COMPLEMENTARY SILICON POWER TRANSISTORS
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STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES

DESCRIPTION The TIP3055 is a siliconEpitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type isthe TIP2955.

3 2 1

TO-218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter PNP NPN V CBO V CEO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-EmitterVoltage (I B = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature
o

Value TIP2955 TIP3055 100 60 15 7 90 -65 to 150 150

Unit

V V A A W
o o

C C

Max.Operating Junction Temperature

For PNP types voltage and current are negative.

August 1999

1/4

TIP2955/TIP3055
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.4
oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I CEO IEBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) EmitterCut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 30 V V EB = 7 V I C = 30 mA 60 T J = 150 o C Min. Typ. Max. 1 5 0.7 5 Unit mA mA mA mA V

V CEO(sus) ∗ Collector-EmitterSustaining Voltage (I B = 0) VCE(sat) ∗ V BE ∗ h FE ∗ h fe fT t on t off Collector-emitter Saturation Voltage Base-emitter Voltage DC Current Gain Small Signal Current Gain Transition-Frequency RESISTIVELOAD Turn-on Time Turn-off Time

IC = 4 A I C = 10 A IC = 4 A IC = 4 A I C = 10 A IC = 1 A I C = 0.5 A IC = 6 A RL = 5 Ω

I B = 0.4 A I B = 3.3 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CE =10 V f = 1 KHz f = 1 MHz 20 5 15 3 0.5 0.9

1 3 1.8 70

V V V

MHz µs µs

I B1 = - IB2 = 0.6 A V BE(off) = - 4 V

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type, voltage...
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