Trct 1000

TCRT1000/ TCRT1010
Vishay Telefunken

Reflective Optical Sensor with Transistor Output
Description
The TCRT1000/ TCRT1010 have a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR-beam from the object. The operating wavelength is 950 nm. The detector consists of aphototransistor.

B) A)

Applications
D Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmissive sensing).
14867

Features
D Compact construction in spacing of 0.1 D No setting efforts D High signal outputs D Low temperature coefficient D Detector provided with optical filter D Current Transfer Ratio (CTR) oftypical 2.5%

96 11971

A

C

E

C

Top view

Order Instruction
Ordering Code TCRT1000A) TCRT1010B) Sensing Distance 1 mm 1 mm Remarks

Document Number 83752 Rev. A3, 27–May–99

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TCRT1000/ TCRT1010
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperatureTest Conditions Symbol VR IF IFSM PV Tj Value 5 50 3 100 100 Unit V mA A mW °C

tp ≤ 10 ms Tamb ≤ 25°C

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 32 5 50 100 100 Unit V V mA mW °C

Tamb ≤ 25°C

Coupler
Parameter Total power dissipation Ambienttemperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C Symbol Ptot Tamb Tstg Tsd Value 200 –55 to +85 –55 to +100 260 Unit mW °C °C °C

2 mm from case, t ≤ 5 s

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Document Number 83752 Rev. A3, 27–May–99

TCRT1000/ TCRT1010
Vishay Telefunken Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Forward voltage TestConditions IF = 50 mA Symbol VF Min. Typ. 1.25 Max. 1.6 Unit V

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 5 Typ. Max. Unit V V nA

200

Coupler
Parameter Collector current Test Conditions Symbol Min. Typ. VCE = 5 V, IF = 20 mA, IC1) 0.30.5 d = 1 mm (figure 1) Cross talk current VCE = 5 V, IF = 20 mA ICX 2) (figure 1) Collector emitter satuIF = 20 mA, IC = 0.1 mA, VCEsat1) ration voltage d = 1 mm (figure 1) 1) Measured with the ‘Kodak neutral test card’, white side with 90% diffuse reflectance 2) Measured without reflecting medium Max. Unit mA

1 0.3

mA
V

Reflecting medium (Kodak neutral test card)

~ ~ ~

d

~ ~ ~Detector Emitter

A

C

E

C

95 10893

Figure 1. Test circuit

Document Number 83752 Rev. A3, 27–May–99

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TCRT1000/ TCRT1010
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot – Total Power Dissipation ( mW ) I C – Collector Current ( mA ) 10.0 Kodak Neutral Card (White Side) d = 1.0 mm 1.0 IF = 50 mA 20 mA 10mA 5 mA 0.1 2 mA

Coupled device 200

Phototransistor 100 IR-diode

0 0
95 11071

0.01 25 50 75 100
95 11075

0.1

1

10

100

Tamb – Ambient Temperature ( °C )

VCE – Collector Emitter Voltage ( V )

Figure 2. Total Power Dissipation vs. Ambient Temperature
1000.0

Figure 5. Collector Current vs. Collector Emitter Voltage

100 CTR – Current Transfer Ratio ( % ) d=1mmVCE=5V 10

I F – Forward Current ( mA )

100.0

10.0

1

1.0

0.1 0
96 11862

0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V )
95 11076

0.1

1

10

100

IF – Forward Current ( mA )

Figure 3. Forward Current vs. Forward Voltage
CTR rel – Relative Current Transfer Ratio 2.0

Figure 6. Current Transfer Ratio vs. Forward Current
10 I C –...