Utecnico

2SK2267
2

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2267
Chopper Regulator, DC−DC Converter and Motor Drive
Applications

Unit: mm

4-V gate drive
Low drain−source ON-resistance

: RDS (ON) = 8 mΩ (typ.)

High forward transfer admittance

: |Yfs| = 60 S (typ.)

Low leakage current

: IDSS = 100 μA (max) (VDS = 60 V)

Enhancement mode

:Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)
Characteristics

Symbol

Rating

Unit

Drain−source voltage

VDSS

60

V

Drain−gate voltage (RGS = 20 kΩ)

VDGR

60

V

Gate−source voltage

VGSS

±20

V

(Note 1)

ID

60

A

Pulse (Note 1)

IDP

240

A

JEDEC

―

Drain power dissipation (Tc = 25°C)

PD

150W

JEITA

―

Single pulse avalanche energy
(Note 2)

EAS

1054

mJ

TOSHIBA

Avalanche current

IAR

60

A

Repetitive avalanche energy (Note 3)

EAR

15

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

DC

Drain current

2-21F1B

Weight: 9.75 g (typ.)

Note: Using continuously under heavy loads(e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor ReliabilityHandbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch−c)

0.833

°C / W

Thermal resistance, channel to ambient

Rth (ch−a)

35.7

°C / W

Note 1: Ensure that thechannel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 398 μH, RG = 25 Ω, IAR = 60 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.

1

2009-12-09

2SK2267
Electrical Characteristics (Ta = 25°C)
Characteristics

Symbol

Test ConditionMin

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

—

±10

μA

Drain cut−off current

IDSS

VDS = 60 V, VGS = 0 V

—

—

100

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

60

—

—

V

Vth

VDS = 10 V, ID = 1 mA

0.8

—

2.0

V

VGS = 4 V, ID = 30 A

—

12

15

VGS = 10 V, ID = 30 A

—

8

11

VDS = 10V, ID = 30 A

40

60

—

—

5500

—

—

920

—

Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance

RDS (ON)

Forward transfer admittance

|Yfs|

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss

—

2600

—

tr

—

30

—

ton

—

60

mΩ

—

Rise time

Turn−on timeVDS = 10 V, VGS = 0 V, f = 1 MHz

S

pF

ns

Switching time
Fall time

tf

—

65

—

toff

—

220

—

Total gate charge (Gate–source
plus gate–drain)

Qg

—

170

—

Gate–source charge

Qgs

—

110

—

Gate–drain (“miller”) charge

Qgd

—

60

—

Turn–off time

VDD ≈ 48 V, VGS = 10 V, ID = 60 A

nC

Source−Drain Ratings andCharacteristics (Ta = 25°C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current
(Note 1)

IDR

—

—

—

60

A

Pulse drain reverse current
(Note 1)

IDRP

—

—

—

240

A

Forward voltage (diode)

VDSF

IDR = 60 A, VGS = 0 V

—

—

−1.7

V

Reverse recovery time

trr

—

150

—

ns...