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MBR1635, MBR1645, MBRB1645
MBR1645 is a Preferred Device

SWITCHMODEE Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal.
Features http://onsemi.com MARKING DIAGRAMS
TO−220AC CASE 221B PLASTIC

• • • •

Guard−ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Pb−FreePackages are Available
1 3

4

Mechanical Characteristics:

AYWWG B16x5 KA

• Case: Epoxy, Molded • Weight: 1.9 Grams for TO−220

3 A Y WW B16x5 x KA G

1, 4 = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Diode Polarity = Pb−Free Package

1.7 Grams for D2PAK • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperaturefor Soldering Purposes: 260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1635 MBR1645 MBRB1645 Average Rectified Forward Current Delay (Rated VR, TC = 163°C) Total Device Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz, TC = 157°C) Total Device Non−Repetitive Peak Surge Current (SurgeApplied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR Value Unit V 35 45 45 A 16 32 A 1

4

D2PAK CASE 418B STYLE 3

B1645G AYWW

3

1 4 3 B1645 A Y WW G = Device Code = Assembly Location = Year = Work Week= Pb−Free Package

IF(AV) IFRM

IFSM

150

A

ORDERING INFORMATION
1.0 −65 to +175 −65 to +175 10,000 A °C °C V/ms Device MBR1635 MBR1635G MBR1645 MBR1645G MBRB1645T4G Package TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) D2PAK (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 800 Units / Rail

IRRM Tstg TJ dv/dt

Stresses exceeding MaximumRatings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

Preferred devices are recommendedchoices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2008

June, 2008 − Rev. 11

1

Publication Order Number: MBR1635/D

MBR1635, MBR1645, MBRB1645
THERMAL CHARACTERISTICS
Characteristic Maximum Thermal Resistance, Junction−to−Case Symbol RqJC Value 1.5 Unit °C/W

ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage(Note 2) (iF = 16 Amps, TC = 125°C) (iF = 16 Amps, TC = 25°C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol vF Value 0.57 0.63 mA 40 0.2 Unit V

iR

http://onsemi.com
2

MBR1635, MBR1645, MBRB1645
iF, INSTANTANEOUS FORWARD CURRENT (A) 100 70 50 30 20 10 7.0 5.0 3.0 2.01.0 0 0.2 0.4 0.6 0.8 TJ = 125°C 100°C 25°C 1.0E−01 TJ = 150°C IR, REVERSE CURRENT (A) 1.0E−02 1.0E−03 1.0E−04 1.0E−05 25°C 1.0E−06 1.0E−07 1.0 0 10 20 30 40 50 vF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) 125°C

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current

28 dc 26 24 22 20 SQUARE 18 16 14 12 10 8 6 4 2 0 145 150

20 18 IF(AV), AVERAGE FORWARDCURRENT (A) 16 14 12 10 8 6 4 2 0 155 160 165 170 175 TC, CASE TEMPERATURE (°C) 0 SQUARE WAVE 25 50 75 100 dc dc

IF(AV), AVERAGE FORWARD CURRENT (A)

RqJA = 16°C/W RqJA = 60°C/W (No Heat Sink)

125

150

175

TA, AMBIENT TEMPERATURE (°C)

Figure 3. Current Derating, Case, Per Leg
PF(AVE)AVERAGE POWER DISSIPATION (W) ,

Figure 4. Current Derating, Ambient

16 14 12 10 8.0

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