2N3055 Datasheet

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2N3055 MJ2955

COMPLEMENTARY SILICON POWER TRANSISTORS
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STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES

DESCRIPTION The 2N3055 is a silicon Epitaxial-BasePlanar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP typeis MJ2955.

1 2
TO-3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CER V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0)Collector-Emitter Voltage (R BE ≤ 100Ω) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating JunctionTemperature Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200 V V V V A A W
o o

Unit

C C

For PNP types voltage and current values are negative.

August 1999

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2N3055 /MJ2955
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.5
o

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I CEO IEBO Parameter CollectorCut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 30 V V EB = 7 V I C = 200 mA 60 T j = 150 o C Min.Typ. Max. 1 5 0.7 5 Unit mA mA mA mA V

V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) VCER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 100 Ω) VCE(sat) ∗ V BE ∗ h FE ∗ fT Is/b ∗Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency Second Breakdown Collector Current

I C = 200 mA

70

V

IC = 4 A I C = 10 A IC = 4 A IC = 4 A IC = 10 A I C = 0.5 A V CE = 40 V

I B = 400 mA I B = 3.3 A V CE = 4 A V CE = 4 A V CE = 4 A V CE = 10 V 20 5 3 2.87

1 3 1.8 70

V V V

MHz A

∗ Pulsed: Pulse duration = 300 µs, duty cycle...