Bc558

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BC556/557/558/559/560

BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550

1

TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -100 500 150 -65 ~ 150 Units V V V V V V V mA mW °C °C

VCEO

VEBO IC PC TJ TSTG

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NFParameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mAVCE= -5V, IC= -10mA VCE= -5V, IC= -10mA, f=10MHz VCB= -10V, IE=0, f=1MHz VCE= -5V, IC= -200µA f=1KHz, RG=2KΩ VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000MHz 2 1 1.2 1.2 -600 Min. 110 -90 -250 -700 -900 -660 150 6 10 4 4 2 -750 -800 Typ. Max. -15 800 -300 -650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA

hFE Classification
Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800

©2002 FairchildSemiconductor Corporation

Rev. A2, August 2002

BC556/557/558/559/560

Typical Characteristics

-50 -45

1000

IB = -400µA IB = -350µA

VCE = -5V

IC[mA], COLLECTOR CURRENT

-40 -35 -30 -25 -20 -15 -10 -5 -0 -2 -4 -6 -8 -10

hFE, DC CURRENT GAIN

IB = -300µA IB = -250µA IB = -200µA IB = -150µA IB = -100µA IB = -50µA

100

10

-12

-14

-16

-18

-20

1 -0.1-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10

-100

-1

V BE(sat)

IC[mA], COLLECTOR CURRENT

IC = -10 IB

VCE = -5V

-10

-0.1

-1

VCE(sat)

-0.01 -0.1

-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA],COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

1000

Cob(pF), CAPACITANCE

10

f=1MHz IE = 0

VCE = -5V

100

1 -1 -10 -100

10 -1 -10

VCB[V], COLLECTOR-BASE VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. CollectorOutput Capacitance

Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC556/557/558/559/560

Package Dimensions

TO-92
4.58 –0.15
+0.25

0.46

14.47 ±0.40

±0.10

4.58 ±0.20

1.27TYP [1.27 ±0.20] 3.60
±0.20

1.27TYP [1.27 ±0.20]

0.38 –0.05

+0.10

3.86MAX

1.02 ±0.10

0.38 –0.05

+0.10

(R2.29)(0.25)

Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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