Bt134

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Philips Semiconductors

Product specification

Triacs sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

BT134 series E

QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETERBT134Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 4 25 600E 600 4 25 800E 800 4 25 V A A

PINNING - SOT82
PIN 1 2 3 tab DESCRIPTION main terminal 1

PIN CONFIGURATION

SYMBOL

T2
main terminal 2 gate main terminal 2
1 2 3

T1

G

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -5005001 MAX. -600 6001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied withoutdamage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. August 1997 1 Rev 1.200

Philips Semiconductors

Product specification

Triacs sensitive gate
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -

BT134 series E

TYP. 100

MAX. 3.0 3.7 -

UNIT K/W K/W K/W

Thermal resistance full cycle junction to mountingbase half cycle Thermal resistance in free air junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.0 10 2.5 4.0 2.2 1.4 0.7 0.4 0.1 MAX. 10 10 10 25 15 20 15 20 15 1.70 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V VmA

IL

Latching current

VD = 12 V; IGT = 0.1 A

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-statevoltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 50 2 MAX. UNIT V/µs µs

August 1997

2

Rev 1.200

Philips Semiconductors

Product specification

Triacs sensitive gate

BT134 series E

8 7 6 5 4 3 2 1 0

Ptot / W

BT136

Tmb(max) / C101 104

5

IT(RMS) / A

BT136

1

= 180 120 90 60 30

4
107 110 113 116 119

107 C

3

2

1
122 0 1 2 3 IT(RMS) / A 4 125 5

0 -50

0

50 Tmb / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT1361000

ITSM / A

BT136 IT T ITSM

12 10
time

IT(RMS) / A

Tj initial = 25 C max 100 dIT /dt limit

8 6 4

T2- G+ quadrant

2
10 10us

100us

1ms T/s

10ms

100ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.

Fig.5. Maximum permissible...
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