Bt169w

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Philips Semiconductors

Product specification

Thyristor logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate triggercircuits.

BT169W Series

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT169 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. MAX. UNIT BW 200 0.5 0.8 8 DW 400 0.5 0.8 8 EW 500 0.5 0.8 8 GW 600 0.5 0.8 8 V A A A

PINNING - SOT223
PIN 1 2 3 tab DESCRIPTION cathode anode gate anodePIN CONFIGURATION
4

SYMBOL

a

k

1

2

3

g

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tsp ≤ 112 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 B 2001 MAX. D 4001 E 5001 G 6001 UNIT V AA A A A2s A/µs A V V W W ˚C ˚C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current

0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125

I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reversegate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.200

Philips Semiconductors

Product specificationThyristor logic level
THERMAL RESISTANCES
SYMBOL Rth j-sp Rth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted, minimum footprint pcb mounted; pad area as in fig:14 -

BT169W Series

TYP. 156 70

MAX. 15 -

UNIT K/W K/W K/W

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IRPARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 10 mA; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ IT = 2 A VD = 12 V; IT = 10 mA; gate open circuit VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; gate open circuit VD = VDRM(max); VR = VRRM(max); Tj = 125˚C; RGK = 1 kΩ MIN. 0.2 TYP. 50 2 2 1.35 0.5 0.3 0.05 MAX. 200 6 5 1.5 0.8 0.1 UNIT µA mA mA V V V mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM =67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1k Ω ITM = 2 A; VD =VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ MIN. TYP. 25 2 100 MAX. UNIT V/µs µs µs

September 1997

2

Rev 1.200

Philips Semiconductors

Product specification

Thyristor logic level

BT169W Series

1

Ptot / W
conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 1801.57

BT169W

Tsp(max) / C a = 1.57 1.9 2.2

110

10

ITSM / A

BT169 IT I TSM

0.8

113

8

2.8 4 116
6

time T Tj initial = 25 C max

0.6

0.4

119

4

0.2

122

2

0

0

0.1

0.2

0.3 0.4 IF(AV) / A

0.5

0.6

125 0.7

0

1

10 100 Number of half cycles at 50Hz

1000

Fig.1. Maximum on-state dissipation, Ptot, versus average...
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