Data Sheet

1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes

Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
∗This product is available only outside of Japan.

!Applications High-speed switching

!Externaldimensions (Units : mm)

!Features 1) Glass sealed envelope. (GSD) 2) High speed. 3) High reliability.

CATHODE BAND (BLACK) Type No. φ 0.5±0.1

C 29±1 3.8±0.2 29±1

A φ 1.8±0.2!Construction Silicon epitaxial planar

ROHM : GSD EIAJ : − JEDEC : DO-35

!Absolute maximum ratings (Ta = 25°C)
Type 1N4148 1N4150 1N4448 (1N914B) VRM (V) 100 50 100 VR (V) 75 50 75 IFM (mA) 450 600 450 IO(mA) 150 200 150 IF (mA) 200 250 200 IFSM 1µs (A) 2 4 2 P (mW) 500 500 500 Tj (°C) 200 200 200 Topr (°C) −65~+200 −65~+200 −65~+200 Tstg (°C) −65~+200 −65~+200 −65~+200

!Electrical characteristics(Ta = 25°C)
VF (V) Type @ @ @
1mA

BV (V) Min. @
30mA

IR (µA) Max. @25°C VR (V) 0.025 5.0 0.1 0.025 5.0 20 75 50 20 75 50.0

@
2mA

@
5mA

@
10mA

@
20mA

@
50mA

@

@

@0.1mA 0.25mA

100mA 200mA 250mA

@ 5µA 75

@ 100µA 100

@150°C

trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100Ω 20 4 4

Cr (pF)

1N4148 0.54 1N4150 0.62 1N4448 (IN914B) 0.62 0.721.0 0.74 0.86 0.92 1.0 1.0 0.66 0.76 0.82 0.87

− −

50

100.0

50

2.5

4

100

50.0

20

4

4

The upper figure is the minimum VF and the lower figure is the maximum VF value.1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
!Electrical characteristic curves (Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)

100 50

3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0

FORWARD CURRENT: IF (mA)

3000
REVERSE CURRENT : IR (nA)

100°C

20 10 5 2
25°C Ta=75°C Ta=25°C Ta=−25 °C

1000 300 100 30 10 3

70°C

50°C

1 0.5 0.2 0

Ta=25°C

0.2

Ta=1

0.4

0.60.8

1.0

1.2

1.4

1.6

0

20

40

60

80

100 120

5

10

15

20

25

30

FORWARD VOLTAGE : VF (V)

REVERSE VOLTAGE : VR (V)

REVERSE VOLTAGE : VR (V)

Fig. 1...