Datasheet stps30h100cw

®

STPS30H100CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE RATED DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DCto DC converters. Packaged in TO-247, this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operatingjunction temperature * Critical rate of rise of reverse voltage Tc = 155°C δ = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 100 30 15 30 250 1 3 - 65 to + 175 175 10000 Unit V A A A A A °C °C V/µs
A2 K1 A1

2 x 15 A 100 V 175 °C 0.67 V

A1 K A2

TO-247

tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square

* :

dPtot 1 < thermal runaway conditionfor a diode on its own heatsink Rth(j−a) dTj
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July 1999 - Ed: 3D

STPS30H100CW
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.6 0.9 0.1 Unit °C/W

STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverseleakage current Tests Conditions Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2%

Min.

Typ.

Max. 5

Unit µA mA V

VR = VRRM 2 IF = 15 A IF = 15 A IF = 30 A IF = 30 A 0.74 0.64

6 0.80 0.67 0.93 0.80

To evaluate the maximum conduction losses use the following equation : P = 0.54 xIF(AV) + 0.0086 x IF2(RMS)

Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 14 12 10
δ=1 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5

Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode).

IF(av)(A) 18 16 14 12 10 8 6 4 2 0
Rth(j-a)=Rth(j-c)

8 6 4 2 0 0 2 4 6 IF(av) (A) 8 10 12 14
δ=tp/T
T

Rth(j-a)=15°C/W

T

tpδ=tp/T

tp

Tamb(°C) 50 75 100 125 150 175

16

18

20

0

25

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STPS30H100CW
Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration.

IM(A) 240 220 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3

Zth(j-c)/Rth(j-c) 1.0 0.8
Tc=25°C Tc=75°C0.6 0.4 0.2

δ = 0.5

δ = 0.2 δ = 0.1

T

Tc=150°C
t

δ=0.5

t(s) 1E-2 1E-1 1E+0
0.0 1E-4

Single pulse

tp(s) 1E-3 1E-2

δ=tp/T

tp

1E-1

1E+0

Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode).

Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF) 1000

IR(mA) 2E+0 1E+0 1E-1 1E-21E-3
Tj=25°C Tj=125°C

F=1MHz Tj=25°C

500

200
VR(V)

1E-4

VR(V)
60 70 80 90 100

1E-5

0

10

20

30

40

50

100

1

2

5

10

20

50

100

Fig. 7: Forward voltage drop versus forward current (maximum values, per diode).

IFM(A) 200 100
Tj=125°C Tj=25°C

10

VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

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STPS30H100CW
PACKAGEMECHANICAL DATA TO-247 DIMENSIONS REF.
V

Millimeters Min. Typ. Max. Min.

Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143

V

Dia.

H

A

L5

L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3

F1

L1 D

A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00...