Datasheetktc3229

Solo disponible en BuenasTareas
  • Páginas : 2 (288 palabras )
  • Descarga(s) : 4
  • Publicado : 2 de diciembre de 2009
Leer documento completo
Vista previa del texto
Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

KTC3229

DESCRIPTION ¡¤ With TO-220F package ¡¤ High voltage :VCEO=300V APPLICATIONS ¡¤ Forcolor TV chroma output application
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION

Absolute maximum ratings(Ta=25¡æ )
SYMBOLVCBO VCEO VEBO IC IB PC Tj Tstg

电半 固
Collector current Base current

PARAMETER

Collector-base voltage

导体

CONDITIONS Open emitter

Collector-emitter voltageEmitter-base voltage

CHA IN

E SEM NG
Open base Ta=25¡æ

TOR NDU ICO
VALUE 300 300 5 0.1 20 2 150 -55~150

UNIT V V V A mA W ¡æ ¡æ

Open collector

Collector dissipationJunction temperature Storage temperature

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specifiedPARAMETER Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitanceCONDITIONS IC=10mA; IB=1mA VCB=240V; IE=0 VEB=5V; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V IC=20mA ; VCE=20V f=1MHz;VCB=20V 20 30 75 MIN

KTC3229

SYMBOL VCEsat ICBO IEBO hFE-1hFE-2 fT COB

TYP.

MAX 1.0 1.0 1.0

UNIT V ¦Ì ¦Ì A A

200 MHz 4.0 pF

电半 固

导体

INCH

GE S AN

ICO EM

TOR NDU

2

Inchange Semiconductor

ProductSpecification

Silicon NPN Power Transistors
PACKAGE OUTLINE

KTC3229

电半 固

导体

INCH

GE S AN

ICO EM

TOR NDU

Fig.2 Outline dimensions (unindicated tolerance:¡À0.10 mm)

3

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

KTC3229

电半 固

导体

INCH

GE S AN

ICO EM

TOR NDU

4

tracking img