Datasheetktc3229
Páginas: 2 (288 palabras)
Publicado: 2 de diciembre de 2009
Product Specification
Silicon NPN Power Transistors
KTC3229
DESCRIPTION ¡¤ With TO-220F package ¡¤ High voltage :VCEO=300V APPLICATIONS ¡¤ Forcolor TV chroma output application
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25¡æ )
SYMBOLVCBO VCEO VEBO IC IB PC Tj Tstg
电半 固
Collector current Base current
PARAMETER
Collector-base voltage
导体
CONDITIONS Open emitter
Collector-emitter voltageEmitter-base voltage
CHA IN
E SEM NG
Open base Ta=25¡æ
TOR NDU ICO
VALUE 300 300 5 0.1 20 2 150 -55~150
UNIT V V V A mA W ¡æ ¡æ
Open collector
Collector dissipationJunction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specifiedPARAMETER Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitanceCONDITIONS IC=10mA; IB=1mA VCB=240V; IE=0 VEB=5V; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V IC=20mA ; VCE=20V f=1MHz;VCB=20V 20 30 75 MIN
KTC3229
SYMBOL VCEsat ICBO IEBO hFE-1hFE-2 fT COB
TYP.
MAX 1.0 1.0 1.0
UNIT V ¦Ì ¦Ì A A
200 MHz 4.0 pF
电半 固
导体
INCH
GE S AN
ICO EM
TOR NDU
2
Inchange Semiconductor
ProductSpecification
Silicon NPN Power Transistors
PACKAGE OUTLINE
KTC3229
电半 固
导体
INCH
GE S AN
ICO EM
TOR NDU
Fig.2 Outline dimensions (unindicated tolerance:¡À0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
KTC3229
电半 固
导体
INCH
GE S AN
ICO EM
TOR NDU
4
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