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80SQ045N
Preferred Device

Axial Lead Rectifier
These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.Features

http://onsemi.com

• • • • • • • •

High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage High Surge Capacity These are Pb−Free Devices*

SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES

Mechanical Characteristics:

• Case: Epoxy, Molded • Weight: 1.1Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from Case • Polarity: Cathode indicated by Polarity Band • ESD Protection: Human Body Model > 4000 V (Class 3) Machine Model > 400 V (Class C)
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working PeakReverse Voltage DC Blocking Voltage Average Rectified Forward Current TL = 75°C (PsiJL = 12°C/W, P.C. Board Mounting, Note 2) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IO IFSM Max 45 Unit V

AXIAL LEAD CASE267−05 (DO−201AD) STYLE 1

Leads are Readily Solderable

MARKING DIAGRAM

80SQ 045N YYWW G G

8.0 140

A A

YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Axial Lead* Axial Lead* Axial Lead* Axial Lead* Shipping † 500 Units/Box 500 Units/Box 1500/Tape & Reel 1500/Tape & Reel

TJ, Tstg dv/dt

−65 to +125 10°C V/ns

80SQ045N 80SQ045NG 80SQ045NRL 80SQ045NRLG

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy andsoldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free.
Preferreddevices are recommended choices for future use and best overall value.

1

May, 2006 − Rev. 3

Publication Order Number: 80SQ045N/D

80SQ045N
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Lead (See Note 2 − Mounting Data) Thermal Resistance, Junction−to−Ambient (See Note 2 − Mounting Data) Symbol RqJL RqJA 0.9 in x 0.9 in Copper Pad Size 13 50 6.75 in x 6.75 inCopper Pad Size 12 40 Unit °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 A, TL = 25°C) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1) TL = 25°C TL = 100°C 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Symbol vF 0.55 iR 1.0 50 mA Max Unit V

30 IF, INSTANTANEOUS FORWARD CURRENT(AMPS) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

30 10

100°C 1 125°C 75°C

MBR845 1 100°C 125°C 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.8 75°C

0.1

25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.8

0.1

Figure 1. Typical Forward Voltage
IR, INSTANTANEOUS REVERSE CURRENT (AMPS)

Figure 2. Maximum Forward Voltage

1E−01...
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