modulador am

MC1496, MC1496B
Balanced Modulators/
Demodulators
These devices were designed for use where the output voltage is a
product of an input voltage (signal) and a switching function (carrier).
Typical applications include suppressed carrier and amplitude
modulation, synchronous detection, FM detection, phase detection,
and chopper applications. See ON Semiconductor Application Note
AN531 foradditional design information.

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Features

1

• Excellent Carrier Suppression −65 dB typ @ 0.5 MHz
•
•
•
•
•

SOIC−14
D SUFFIX
CASE 751A

14

−50 dB typ @ 10 MHz
Adjustable Gain and Signal Handling
Balanced Inputs and Outputs
High Common Mode Rejection −85 dB Typical
This Device Contains 8 Active Transistors
Pb−Free Package is Available*

PDIP−14
PSUFFIX
CASE 646

14
1

PIN CONNECTIONS
Signal Input 1

14 VEE

Gain Adjust 2

13 N/C

Gain Adjust 3

12 Output

Signal Input 4

11 N/C

Bias 5
Output 6
N/C 7

10 Carrier Input
9 N/C
8 Input Carrier

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.

DEVICE MARKING INFORMATION
Seegeneral marking information in the device marking
section on page 12 of this data sheet.

*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2004

April, 2004 − Rev. 9

1

Publication Order Number:
MC1496/DMC1496, MC1496B
0

Log Scale Id

IC = 500 kHz
IS = 1.0 kHz
20

40
IC = 500 kHz, IS = 1.0 kHz

60

Figure 1. Suppressed Carrier Output
Waveform

499 kHz

500 kHz

501 kHz

Figure 2. Suppressed Carrier Spectrum
10
IC = 500 kHz
IS = 1.0 kHz

Linear Scale

8.0
6.0
4.0
2.0
IC = 500 kHz
IS = 1.0 kHz

0
499 kHz

Figure 3. Amplitude Modulation
Output Waveform

500 kHz501 kHz

Figure 4. Amplitude−Modulation Spectrum

MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.)
Symbol

Value

Unit

DV

30

Vdc

Differential Input Signal

V8 − V10
V4 − V1

+5.0
±(5 + I5Re)

Vdc

Maximum Bias Current

I5

10

mA

RqJA

100

°C/W

TA

0 to +70
−40 to +125

°C

Storage Temperature Range

Tstg

−65 to +150

°CElectrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)

ESD

Rating
Applied Voltage
(V6−V8, V10−V1, V12−V8, V12−V10, V8−V4, V8−V1, V10−V4, V6−V10, V2−V5, V3−V5)

Thermal Resistance, Junction−to−Air
Plastic Dual In−Line Package
Operating Ambient Temperature Range

MC1496
MC1496B

V
2000
400

Maximum ratings are those values beyond which device damage canoccur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

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2

MC1496, MC1496B
ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, VEE = −8.0 Vdc, I5 = 1.0 mAdc, RL =3.9 kW, Re = 1.0 kW, TA = Tlow to Thigh,
all input and output characteristics are single−ended, unless otherwise noted.) (Note 1)
Characteristic

Fig.

Min

Typ

Max

fC = 1.0 kHz
fC = 10 MHz

Symbol

5

−
−

40
140

−
−

fC = 1.0 kHz
fC = 1.0 kHz

Carrier Feedthrough
VC = 60 mVrms sine wave and
offset adjusted to zero
VC = 300 mVpp square wave:
offset adjusted tozero
offset not adjusted

Note
1

VCFT

−
−

0.04
20

Unit

0.4
200

mVrms
mVrms

Carrier Suppression
fS = 10 kHz, 300 mVrms
fC = 500 kHz, 60 mVrms sine wave
fC = 10 MHz, 60 mVrms sine wave

5

2

Transadmittance Bandwidth (Magnitude) (RL = 50 W)
Carrier Input Port, VC = 60 mVrms sine wave
fS = 1.0 kHz, 300 mVrms sine wave
Signal Input Port, VS = 300 mVrms sine...