Mos Field Effect Transistor

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MOS FIELD EFFECT TRANSISTOR

2SK2984
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

FEATURES
• Low on-resistance
RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A)
RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A)
• Low Ciss

Ciss= 2850 pF TYP.

• Built-in gate protection diode

ORDERING INFORMATION
PART NUMBER

PACKAGE

2SK2984

TO-220AB

2SK2984-S

TO-262

2SK2984-ZJ

TO-263

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage

Note1

VDSS

30

V

VGSS

±20

V

ID(DC)

±40

A

ID(pulse)

±160

A

Total Power Dissipation (TA = 25°C)

PT

1.5

W

TotalPower Dissipation (Tc = 25°C)

PT

60

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Gate to Source Voltage

Note2

Drain Current (DC)
Drain Current (pulse)

Note3

Notes.1 VGS = 0 V
2 VDS = 0 V
3 PW ≤ 10 µ s, Duty Cycle ≤ 1 %
.

T he information in this document is subject to change without notice.

Document No.D12356EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP (K)
Printed in Japan

©

1998

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ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

RDS(on)1

VGS = 10 V, ID = 20 A

6.5

10

mΩ

RDS(on)2

VGS = 4.5 V, ID = 20 A

8.5

13

mΩ

VGS(off)

VDS = 10 V, ID = 1 mA

1.01.5

2.0

V

Forward Transfer Admittance

| yfs |

VDS = 10 V, ID = 20 A

18

36

Drain Leakage Current

IDSS

VDS = 30 V, VGS = 0 V

10

µA

Gate to Source Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

±10

µA

Input Capacitance

Ciss

VDS = 10 V

2600

pF

Output Capacitance

Coss

VGS = 0 V

1150

pF

500

pF

70

ns

1100ns

210

ns

310

ns

Drain to Source On-state Resistance

Gate to Source Cut-off Voltage

Reverse Transfer Capacitance

Crss

Turn-on Delay Time

f = 1 MHz

td(on)

Rise Time

ID = 20 A
VGS(on) = 10 V

tr

Turn-off Delay Time

VDD = 15 V

td(off)

Fall Time

RG = 10 Ω

tf

Total Gate Charge

QG

Gate to Drain Charge

ID = 40 A

65

nC

QGSGate to Source Charge

VDD = 24 V

9.5

nC

12.5

nC

VGS = 10 V

QGD

Body Diode Forward Voltage

VF(S-D)

0.8

V

IF = 40 A, VGS = 0 V

50

ns

Qrr

Reverse Recovery Charge

IF = 40 A, VGS = 0 V

trr

Reverse Recovery Time

di/dt = 100 A /µS

100

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE
D.U.T.

D.U.T.
RL
RG
RG = 10 ΩPG.

IG = 2 mA

VGS

VGS
Wave Form

0

PG.

VDD

ID

90 %
90 %
10 %

0 10 %

Wave Form

τ = 1µ s
Duty Cycle ≤ 1 %

tr

td(on)
ton

RL

50 Ω

VDD

90 %

ID

τ

2

VGS(on)

10 %

ID

VGS
0

S

td(off)

tf
toff

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TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREATOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

70
100
80
60
40
20

0

20

40

60

80

60
50
40
30
20
10
0

100 120 140 160

TC - Case Temperature - ˚C

20

40

60

80

100 120 140 160

TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

FORWARD BIAS SAFEOPERATING AREA
1000

Pulsed
ID(pulse)
d
ite )
Lim 10 V
n)
=
(o
S
DS
R VG
t
(a

100

1

m

ID(DC)

s

10

10

0

Po

m

s

m

s

we

rD

10

ID - Drain Current - A

ID - Drain Current - A

125

DC

iss

ipa

tio

n

100

VGS =10 V
VGS = 4.5 V

75
50

Lim

ite

d

TC = 25˚C
Single Pulse

1
0.1

1

10

100

VDS -...