Ninguno

2N3819
Vishay Siliconix

N-Channel JFET

PRODUCT SUMMARY
VGS(off) (V)
v –8

V(BR)GSS Min (V)
–25

gfs Min (mS)
2

IDSS Min (mA)
2

FEATURES
D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA

BENEFITS
D D D D D Wideband High Gain Very High SystemSensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches

DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.

TO-226AA (TO-92)
S 1

G

2

D

3

Top View

ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . –25 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70238 S–04028—Rev. D ,04-Jun-01 LeadTemperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com

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2N3819
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Gate-Source BreakdownVoltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = –15 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = –8V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V –0.5 2 –25 –35 –3 10 –0.002 –0.002 –20 2 150 –2.5 0.7 –7.5 V pA W V –8 20 –2 –2 mA nA mA

Symbol

Test Conditions

Min

Typa

Max

Unit

Dynamic
Common-Source Forward Transconductancec Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input NoiseVoltagec f = 1 kHz gfs gos Ciss Crss en VDS = 15 V VGS = 0 V f = 100 MHz f = 1 kHz VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 100 Hz 2 1.6 5.5 5.5 25 2.2 0.7 6 50 8 4 pF nV⁄ √Hz NH 6.5 mS mS

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v2%. c. This parameter not registered with JEDEC.TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 10 rDS(on) – Drain-Source On-Resistance ( Ω ) gfs – Forward Transconductance (mS) 500 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
100

IDSS – Saturation Drain Current (mA)16

IDSS

8

400

80

gos – Output Conductance (mS)

12

gfs

6

300

rDS gos

60

8

4

200

40

4

IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDS = 15 V, VGS = 0 V f = 1 kHz

2

100

20

0 0 –2 –4 –6 –8 –10

0 VGS(off) – Gate-Source Cutoff Voltage (V)

0 0 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V)

0

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