Pasante

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number
3575.4

50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applicationssuch as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018.

Features
• 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature

Symbol
D

Ordering InformationPART NUMBER RFG50N06 RFP50N06 RF1S50N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG50N06 RFP50N06 F1S50N06
S G

NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.

Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE)

JEDEC TO-220AB

SOURCE DRAIN GATE

JEDECTO-263AB

DRAIN (FLANGE) GATE SOURCE

4-467

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

RFG50N06, RFP50N06, RF1S50N06SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain toSource Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear DeratingFactor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . . . . . .. . . . . . . . . . . . . . . . . . .Tpkg RFG50N06, RFP50N06 RF1S50N06SM 60 60 ±20 50 (Figure 5) (Figure 6, 14, 15) 131 0.877 -55 to 175 300 260 UNITS V V V A

W W/oC oC
oC oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above thoseindicated in the operational sections of this specification is not implied.

NOTE: 1. TJ = 25oC to 150oC.

Electrical Specifications
PARAMETER

TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V (Figure 11) VGS = VDS, ID = 250µA (Figure 10) VDS = 60V, VGS = 0V VGS = ±20V ID = 50A, VGS = 10V (Figures 9) VDD = 30V, ID = 50A RL = 0.6Ω, VGS = 10V RGS =3.6Ω (Figure 13) TC = 25oC TC = 150oC MIN 60 2 VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 48V, ID = 50A, RL = 0.96Ω Ig(REF) = 1.45mA (Figure 13) (Figure 3) TO-247 TO-220, TO-263 TYP 12 55 37 13 125 67 3.7 2020 600 200 MAX 4 1 50 ±100 0.022 95 75 150 80 4.5 1.14 30 62 UNITS V V µA µA nA Ω ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W oC/W

Drain to Source Breakdown Voltage Gate to Source...