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2N5191 2N5192
MEDIUM POWER NPN SILICON TRANSISTORS

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STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR

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APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTIONThe 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNPtype of 2N5192 is 2N5195.
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SOT-32

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter 2N5191 Collector-Base Voltage (I E= 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. OperatingJunction Temperature
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Value 2N5192 80 80 5 4 7 1 40 -65 to 150 150 60 60

Unit Unit V V V A A A W
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C C 1/4

December 2000

2N5191 / 2N5192
THERMAL DATA
R thj-case R thj-amb ThermalResistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100
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C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I CEX I CEO I EBOParameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO V CE = ratedV CEO V CE = rated V CEO V CE = rated V CEO V EB = 5 V I C = 100 mA for 2N5191 for 2N5192 I C = 1.5 A IC = 4 A I C = 1.5 A I B = 0.15 A IB = 1 A V CE = 2 V 25 20 10 7 2 MHz Min. Typ. Max. 0.1 0.1 2 11 Unit mA mA mA mA mA

T c = 125 o C

V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain

60 800.6 1.4 1.2 100 80

V V V V V

I C = 1.5 A V CE = 2 V for 2N5191 for 2N5192 IC = 4 A V CE = 2 V for 2N5191 for 2N5192 IC = 1 A V CE = 10 V

fT

Transition frequency

∗ Pulsed: Pulse...
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