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DATA SHEET
book, halfpage

M3D252

BGY588N 550 MHz, 34.5 dB gain push-pull amplifier
Product specification Supersedes data of 2000 Feb 14 2001 Oct 22

Philips Semiconductors

Product specification

550 MHz, 34.5 dB gain push-pull amplifier
FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • TiPtAumetallized crystals ensure optimal reliability. APPLICATIONS CATV systems in the 40 to 550 MHz frequency range and intended for use as a line-extender. DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC).
handbook, halfpage

BGY588N

PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output DESCRIPTION

PIN CONFIGURATION

12

3

5

7

8

9

Side view

MSA319

Fig.1 Simplified outline.

QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 50 MHz f = 550 MHz VB = 24 V MIN. 34 35 310 TYP. 34.5 35.5 325 MAX. 35 36 340 UNIT dB dB mA

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Vi Tstg Tmb RF inputvoltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. MAX. 55 +100 +100 UNIT dBmV °C °C

2001 Oct 22

2

Philips Semiconductors

Product specification

550 MHz, 34.5 dB gain push-pull amplifier
CHARACTERISTICS Bandwidth 40 to 550 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp SL FL S11 PARAMETER power gain slope cable equivalent flatness of frequencyresponse input return losses CONDITIONS f = 50 MHz f = 550 MHz f = 40 to 550 MHz f = 40 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 550 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 550 MHz CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. 2. Measured according to DIN45004B; fp= 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC) MIN. 34 35 0.5 − 20 19 18 20 19 18 TYP. 34.5 35.5 1 − − − − − − − − − − − − − − 325

BGY588N

MAX. 35 36 1.5 ±0.3− − − − − − −57 −59 −62 −74 − 5 6 340

UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dB dB mA

77 channels flat; Vo = 44 dBmV; − measured at 547.25 MHz 77 channels flat; Vo = 44 dBmV; − measured at 55.25 MHz 77 channels flat; Vo = 44 dBmV; − measured at 548.5 MHz note 1 dim = −60 dB; note 2 f = 50 MHz f = 550 MHz value; VB = 24 V; note 3 − 61 − − 310

3. The module normally operates at VB =24 V, but is able to withstand supply transients up to 30 V.

2001 Oct 22

3

Philips Semiconductors

Product specification

550 MHz, 34.5 dB gain push-pull amplifier
PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads

BGY588N

SOT115J

D E Z p

A2 1 A L FS W d U2 B y M B p Q e e1 q2 q1 y M B y M B b w M 2 3 5 7 8 9

c

U1

q

0

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8

mm 20.8

0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38

38.1 25.4 10.2

4.2 44.75

6-32 0.25 UNCOUTLINE VERSION SOT115J

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 99-02-06

2001 Oct 22

4

Philips Semiconductors

Product specification

550 MHz, 34.5 dB gain push-pull amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS

BGY588N

This data sheet contains data from the objective specification for product...