Transistor

7

Semiconductor

STS9014
NPN Silicon Transistor

Description
• General purpose application • Switching application

Features
• Excellent hFE linearity :hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz • Complementary pair with STS9015

Ordering Information
Type NO. STS9014 MarkingSTS9014 Package Code TO-92

Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1

unit : mm

4.5±0.1

0.4±0.02

2.06±0.1

14.0±0.40

1.27 Typ. 2.54 Typ.

1 2 3

1.20±0.1

PINConnections 1. Emitter 2. Base 3. Collector

0.38

KST-9017-000

1

STS9014
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emittervoltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature

(Ta=25°C) °

Symbol
VCBO VCEO VEBOIC IE PC Tj Tstg

Ratings
60 50 5 150 -150 625 150 -55~150

Unit
V V V mA mA mW °C °C

Electrical Characteristics
Characteristic
Collector cut-off current Emittercut-off current DC current gain Collector-Emitter saturation voltage Transistion frequency Collector output capacitance Noise figure

(Ta=25°C) °

Symbol
ICBOIEBO hFE fT Cob NF
*

Test Condition
VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCB=6V, IC=0.1mA, f=1KHz,Rg=10KΩ

Min. Typ. Max.
100 60 0.1 2 50 100 1000 0.25 3.5 10

Unit
nA nA V MHz pF dB

VCE(sat)

* : hFE rank / B : 100 ~ 300, C : 200 ~ 600, D : 400 ~ 1000.KST-9017-000

2

STS9014
Electrical Characteristic Curves
Fig. 1 PC –Ta Fig. 2 IC -VBE

5

Fig. 3 IC -VCE

Fig. 4 hFE -IC

Fig. 5 VCE(sat) -IC

KST-9017-000

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