Transistores

BC327/328

BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92

1

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C

VCEO

VEBO IC PC TJ TSTG

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Collector-Emitter Breakdown Voltage : BC327 :BC328 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC327 : BC328 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V,IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 100 40 -5 -2 -2 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V

BVCES

BVEBO ICES

hFE1 hFE2 VCE (sat) VBE (on) fT Cob

hFE Classification
Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170-

©2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

BC327/328Typical Characteristics

-500

-20

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

-400

-300

mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB =

IB=
-16

µA - 80 µA - 70 I =
B

IB=

µA - 60
IB=

P

T

µA - 50
IB= - 40

=6 00 mW

-12

µA
30µA

1.5 IB = -200

mA

IB = - 1.0mA IB = - 0.5mA

PT = 600mW

-8

IB = -

0µA IB = - 2
-4

-100

IB = - 10µA
IB = 0
-0 -1 -2 -3 -4 -5

IB = 0
-10 -20 -30 -40 -50

VCE[V], COLLECTOR-EMITTER VOLTAGE

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Static Characteristic

1000

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10

PULSE
V CE = - 2.0V

IC = 10 IB PULSE
V CE(sat)

hFE, DC CURRENTGAIN

100

-1

- 1.0V

10

-0.1

V BE(sat)

1 -0.1

-1

-10

-100

-1000

-0.01 -0.1

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

-1000

1000

IC[mA], COLLECTOR CURRENT

VCE = -1V PULSE
-100

-10

fT[MHz],GAIN-BANDWIDTH PRODUCT

VCE = -5.0V

100

-1

-0.1 -0.4

10 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100

VBE[V], BASE-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. Base-Emitter On Voltage

Figure 6. Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

BC327/328

Package Dimensions

TO-92
4.58 –0.15
+0.25

0.46

14.47 ±0.40±0.10

4.58 ±0.20

1.27TYP [1.27 ±0.20] 3.60
±0.20

1.27TYP [1.27 ±0.20]

0.38 –0.05

+0.10

3.86MAX

1.02 ±0.10

0.38 –0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002

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