Mps2222A Trancistor

MPS2222A
New Product

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (NPN)

TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

Features• NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • On special request, this transistor is also manufactured in the pin configuration TO-18. • This transistor isalso available in the SOT-23 case with the type designation MMBT2222A.

Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/boxE7/4K per Ammo mag., 20K/box

max. ∅ 0.022 (0.55) 0.098 (2.5)
Dimensions in inches and (millimeters)

Bottom View

Maximum Ratings & Thermal Characteristics
Parameter Collector-Base VoltageCollector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation TA = 25°C Derate above 25°C TC = 25°C Derate above 25°C Symbol VCBO VCEO VEBO IC Ptot Ptot RΘJA RΘJCTj TS

Ratings at 25°C ambient temperature unless otherwise specified.

Value 75 40 6.0 600 625 5.0 1.5 12 200 83.3 150 –55 to +150

Unit V V V mA mW mW/°C W mW/°C °C/W °C/W °C °C

ThermalResistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range

Document Number 88231 10-May-02

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MPS2222A
VishaySemiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter

J

= 25°C unless otherwise noted)

Symbol

Test Condition VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE =10 V, IC = 10 mA VCE = 10 V, IC = 10 mA TA = -55°C VCE = 10 V, IC = 150 mA(1) VCE = 1.0 V, IC = 150 mA(1) VCE = 10 V, IC = 500 mA(1) IC = 10 µA, IE = 0 IC = 10 mA, IB = 0 IE = 10 µA, IC = 0 IC = 150mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VEB = 3 V, VCE = 60 V VCB = 60 V, IE = 0 VCB = 50V,IE =0,TA =125°C VEB = 3 V, IC = 0 VCE = 60 V, VEB = 3.0 V VCE...