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WTE
POWER SEMICONDUCTORS

1N4148 / LL4148
FAST SWITCHING DIODE

Features
! ! ! ! Fast Switching Speed A B C LL4148 Glass Package Version for High Reliability A B A High Conductance Availablein Both Through-Hole and Surface Mount Versions C D 1N4148

Mechanical Data
! ! ! ! ! Case: DO-35, MiniMELF Terminals: Plated LeadsSolderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: DO-35 0.13 grams MiniMELF 0.05 grams Marking: Cathode Band Only
DO-35 Dim Min Max A 25.40 — B — 4.00 C — 0.60 D — 2.00 AllDimensions in mm MiniMELF Dim A B C MIn 3.30 1.30 0.28 Max 3.70 1.60 0.50

All Dimensions in mm

Maximum Ratings @TA=25°C unless otherwise specified
Characteristic Non-Repetitive Peak Reverse VoltagePeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Rectified Current (Average), Half Wave Rectification withResistive Load and f  50MHz (Note 1) Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0µs Symbol VRM VRRM VRWM VR VR(RMS) IFM IO Value 100 Unit V

75

V

53 300 150 1.0 2.0 500 1.68 300-65 to +175

V mA mA

IFSM

A mW mW/°C K/W °C

Power Dissipation (Note 1) Derate Above 25°C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range

PdRJA Tj, TSTG

1N4148 / LL4148

1 of 3

© 2002 Won-Top Electronics

Electrical Characteristics
Characteristic Maximum Forward Voltage

@TA=25°C unless otherwise specified

Symbol VFMMin —

Max 1.0 5.0 50 30 25 4.0 4.0

Unit V µA µA µA nA pF ns

Test Condition IF = 10mA VR = 75V VR = 70V, Tj = 150°C VR = 20V, Tj = 150°C VR = 20V VR = 0, f = 1.0MHz IF = 10mA to IR = 1.0mA VR =6.0V, RL = 100

Maximum Peak Reverse Current

IRM



Capacitance Reverse Recovery Time

Cj trr

— —

Note: 1. Diode on Ceramic Substrate 10mm x 8mm x 0.7mm.

1N4148 / LL4148

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