Datasheet Tl082

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier

November 1994

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier
General Description
These devices are low cost high speed dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET IITM technology) They require low supply current yet maintain a large gain bandwidth product and fast slewrate In addition well matched high voltage JFET input devices provide very low input bias and offset currents The TL082 is pin compatible with the standard LM1558 allowing designers to immediately upgrade the overall performance of existing LM1558 and most LM358 designs These amplifiers may be used in applications such as high speed integrators fast D A converters sample and hold circuits andmany other circuits requiring low input offset voltage low input bias current high input impedance high slew rate and wide bandwidth The devices also exhibit low noise and offset voltage drift

Features
Y Y Y Y Y Y Y Y Y

Y Y

Internally trimmed offset voltage Low input bias current Low input noise voltage Low input noise current Wide gain bandwidth High slew rate Low supply current High inputimpedance Low total harmonic distortion AV e 10 RL e 10k VO e 20 Vp b p BW e 20 Hzb20 kHz Low 1 f noise corner Fast settling time to 0 01%

15 mV 50 pA 16nV SHz 0 01 pA SHz 4 MHz 13 V ms 3 6 mA 1012X k 0 02%

50 Hz 2 ms

Typical Connection

Connection Diagram
DIP SO Package (Top View)

TL H 8357 – 3

TL H 8357 – 1

Order Number TL082CM or TL082CP See NS Package Number M08A or N08ESimplified Schematic

TL H 8357 – 2

BI-FET IITM is a trademark of National Semiconductor Corp C1995 National Semiconductor Corporation

TL H 8357

RRD-B30M115 Printed in U S A

Absolute Maximum Ratings
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage PowerDissipation Operating Temperature Range Tj(MAX)
g 18V

Differential Input Voltage Input Voltage Range (Note 2) Output Short Circuit Duration Storage Temperature Range Lead Temp (Soldering 10 seconds) ESD rating to be determined

g 30V g 15V

Continuous
b 65 C to a 150 C

(Note 1) 0 C to a 70 C 150 C

260 C

DC Electrical Characteristics (Note 4)
Symbol VOS DVOS DT IOS IB RIN AVOLParameter Input Offset Voltage Average TC of Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Large Signal Voltage Gain Conditions Min RS e 10 kX TA e 25 C Over Temperature RS e 10 kX Tj e 25 C (Notes 4 5) Tj s 70 C Tj e 25 C (Notes 4 5) Tj s 70 C Tj e 25 C VS e g 15V TA e 25 C VO e g 10V RL e 2 kX Over Temperature VS e g 15V RL e 10 kX VS e g 15V RS s 10 kX (Note 6) 25 15g 12 g 11 g 13 5

TL082C Typ 5 10 25 50 1012 100 200 4 400 8 Max 15 20

Units mV mV mV C pA nA pA nA X V mV V mV V V V dB dB 56 mA

VO VCM CMRR PSRR IS

Output Voltage Swing Input Common-Mode Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current

a 15 b 12

70 70

100 100 36

AC Electrical Characteristics (Note 4)
Symbol Parameter Amplifier toAmplifier Coupling SR GBW en in Slew Rate Gain Bandwidth Product Equivalent Input Noise Voltage Equivalent Input Noise Current Conditions Min TA e 25 C f e 1Hz20 kHz (Input Referred) VS e g 15V TA e 25 C VS e g 15V TA e 25 C TA e 25 C RS e 100X f e 1000 Hz Tj e 25 C f e 1000 Hz 8 TL082C Typ
b 120

Units Max dB V ms MHz nV pA

13 4 25 0 01

SHz SHz

Note 1 For operating at elevatedtemperature the device must be derated based on a thermal resistance of 115 C W junction to ambient for the N package Note 2 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage Note 3 The power dissipation limit however cannot be exceeded Note 4 These specifications apply for VS e g 15V and 0 C s TA s a 70 C VOS IB and IOS are measured at...