Datasheet- transistor (2n3904)

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E2N3904 / MMBT3904 / PZT3904

2N3904

MMBT3904
C

PZT3904
C

E C B

E C

TO-92
E

SOT-23
Mark: 1A

B

SOT-223

B

NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, TstgCollector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
40 60 6.0 200 -55 to +150

Units
V V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are basedon a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction toAmbient 2N3904 625 5.0 83.3 200

Max
*MMBT3904 350 2.8 357 **PZT3904 1,000 8.0 125

Units
mW mW/°C °C/W °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

 2001 Fairchild Semiconductor Corporation

2N3904/MMBT3904/PZT3904, Rev A

2N3904 / MMBT3904 / PZT3904

NPN General PurposeAmplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10µA, IC = 0 VCE = 30 V, VEB = 3V VCE = 30 V, VEB = 3V 40 60 6.0 50 50 V V V nA nA

ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300

VCE(sat) VBE(sat)Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.65

0.2 0.3 0.85 0.95

V V V V

SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7kHz 300 4.0 8.05.0 MHz pF pF dB

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier
(continued)

Typical Characteristics

500 400
125 °C

V CE = 5V

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYP ICAL PULSED CURRE NT GAIN

Typical Pulsed Current Gain vs Collector CurrentCollector-Emitter Saturation Voltage vs Collector Current
0.15 β = 10
125 °C

300
25 °C

0.1
25 °C

200 100 0 0.1
- 40 °C

0.05
- 40 °C

1 10 I C - COLLECTOR CURRENT (mA)

100

0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

V BE(ON) BASE-EMITTER ON VOLTAGE (V)

VBESAT- BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current
1
β = 10

Base-Emitter ON...
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