Datasheet

BC556 thru BC558
Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistors (PNP)
TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

Features
• PNPSilicon Epitaxial Planar Transistors for switching and AF amplifier applications. • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC556 isavailable in groups A and B, however, the types BC557 and BC558 can be supplied in all three groups. As complementary types, the NPN transistors BC546...BC548 are recommended. • On special request, thesetransistors are also manufactured in the pin configuration TO-18.

max. ∅ 0.022 (0.55) 0.098 (2.5)
Dimensions in inches and (millimeters)

Mechanical Data
Case: TO-92 Plastic Package Weight:approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

Bottom View

Maximum Ratings & Thermal Characteristics
Parameter Collector-Base VoltageBC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 Symbol –VCBO

Ratings at 25°C ambient temperature unless otherwise specified.

Value 80 50 30 80 50 30 65 45 30 5 100 200 200 200 500 250
(1) (1)Unit V

Collector-Emitter Voltage

–VCES

V

Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current PowerDissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range

–VCEO –VEBO –IC –ICM –IBM IEM Ptot RΘJA Tj TS

V V mA mA mA mA mW °C/W °C °C

150 –65to +150

Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

Document Number 88161 09-May-02

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BC556 thru BC558
VishaySemiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter
Current gain group

J

= 25°C unless otherwise noted)

Symbol A B C A B C A B C A B C A B C A B C A B C...