Datasheet

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.4N29

4N30

4N31

4N32

4N33

FEATURES
• High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval available as a test option -addoption .300. (e.g., 4N29.300)

SCHEMATIC

ANODE 1

6 BASE

APPLICATIONS
• • • • • Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacingcoupling systems of different potentials and impedances.
CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER

ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead SolderTemperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER Continuous Forward Current Reverse Voltage

(TA = 25°C Unless otherwise specified.) Symbol TSTG TOPR TSOL PD IF VRIF(pk) PD BVCEO BVCBO BVECO PD IC Value -55 to +150 -55 to +100 260 for 10 sec 250 3.3 80 3 3.0 150 2.0 30 30 5 150 2.0 150 Units °C °C °C mW mW/°C mA V A mW mW/°C V V V mW mW/°C mA

Forward Current -Peak (300 µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown VoltageDetector Power Dissipation @ TA = 25°C Derate above 25°C Continuous Collector Current

4/25/00

200038B

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS
4N29
ELECTRICAL CHARACTERISTICS

4N304N31

4N32

4N33

(TA = 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER *Input Forward Voltage *Reverse Leakage Current *Capacitance DETECTOR V*Collector-Emitter Breakdown Voltage *Collector-Base Breakdown Voltage *Emitter-Collector Breakdown Voltage *Collector-Emitter Dark Current DC Current Gain Test Conditions (IF = 10 mA) (VR = 3.0 V)...