Electronica

NTE312
N–Channel Silicon Junction
Field Effect Transistor
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO–92package.
Features:
D High Power Gain: 10dB Min at 400MHz
D High Transconductance: 4000 µmho Min at 400MHz
D Low Crss: 1pF Max
D High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit)
D Drain andGate Leads Separated for High Maximum Stable Gain
D Cross–Modulation Minimized by Square–Law Transfer Characteristic
D For Use in VHF Amplifiers in FM, TV, and Mobile Communications EquipmentAbsolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 30V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Gate Current, IG . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C ), PD . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 360mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/°C
Total Device Dissipation(TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 4.0mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature, DuringSoldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter

Symbol

Test Conditions

Min...