Historia

MD1803DFH
High voltage NPN Power transistor for standard definition CRT display
Features
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State-of-the-art technology: – Diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power package U.L. compliant Creepage distance path > 4mmIntegrated free wheeling diode In compliance with the 2002/93/EC european directive TO-220FH
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Applications
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Internal schematic diagram

Horizontal deflection output for TV

Description
The MD1803DFH is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringingupdated performance to the Horizontal Deflection stage. RBE=60Ω typ.

Order codes
Part number MD1803DFH Marking MD1803DFH Package TO-220FH Packing TUBE

September 2006

Rev 5

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www.st.com 10

Electrical ratings

MD1803DFH

1
Table 1.
Symbol VCES VCEO VEBO IC ICM IB PTOT Visol Tstg TJ

Electrical ratings
Absolute maximum rating
Parameter Collector-emitter voltage (VBE = 0)Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (rms) from all three leads to external heatsink Storage temperature Max. operating junction temperature Value 1500 700 10 10 15 5 40 2500 -65 to 150 150 Unit V V V A A A W V °C

Table 2.
Symbol Rthj-caseThermal data
Parameter Thermal resistance junction-case ____________________Max Value 3.125 Unit °C/W

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MD1803DFH

Electrical characteristics

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Electrical characteristics
(TCASE = 25°C; unless otherwise specified)

Table 3.
Symbol ICES IEBO V(BR)EBO VCE(sat) Note 1 VBE(sat) Note 1 hFE Note 1 Vf ts tf

Electrical characteristics
Parameter Collector cut-off current (VBE = 0)Emitter cut-off current (IC = 0) Test conditions VCE = 1500V VCE = 1500V VEB = 5V Tc= 125°C 40 10 IB = 1.25 A IB = 1.25 A VCE = 5 V VCE = 1 V VCE = 5 V 5.5 18 5 7.5 1.6 fh = 16KHz VBE(off) = -2.7V 2.5 0.3 3 0.6 µs µs V 2 1.2 Min. Typ. Max. 0.2 2 120 Unit mA mA mA V V V

Emitter-base breakdown voltage IE = 700 mA (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage IC = 5A IC = 5 A IC = 1 A DC current gain IC = 5 A IC = 5 A Diode forward voltage Inductive load Storage time Fall time IF= 5 A IC = 4A ___ _ _ IB(on) = 0.6A__ LBB(off) = 4.5µH

1 Pulsed duration = 300 µs, duty cycle ≤1.5%.

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Electrical characteristics

MD1803DFH

2.1

Electrical characteristics (curve)
Safe operating area Figure 2. Derating curve

Figure 1.

Figure 3.

Outputcharacteristics

Figure 4.

Reverse biased SOA

Figure 5.

DC current gain

Figure 6.

DC current gain

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MD1803DFH
Figure 7. Collector-emitter saturation voltage Figure 8.

Electrical characteristics

Base-emitter saturation voltage

Figure 9.

Power losses

Figure 10. Inductive load switching time

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Electrical characteristics

MD1803DFH

2.2

Testcircuit

Figure 11. Power losses and inductive load switching test circuit

Figure 12. Reverse biased safe operating area test circuit

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MD1803DFH

Package mechanical data

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Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second levelinterconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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Package mechanical data

MD1803DFH

TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM. MIN. A...