Motores Asincronos

PD - 91574B

IRG4PH50U
Ultra Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR
Features

C

• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• Optimized for power conversion; SMPS, UPS
and welding
• Industrystandard TO-247AC package

VCES = 1200V
VCE(on) typ. = 2.78V

G

@VGE = 15V, IC = 24A

E

n-channel

Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs

TO-247AC

Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°CICM
ILM
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG

Max.

Units

Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
StorageTemperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.

1200
45
24
180
180
± 20
170
200
78
-55 to + 150

V
A

V
mJ
W

°C
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)

Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt

www.irf.com

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mountWeight

Typ.

Max.

–––
0.24
–––
6 (0.21)

0.64
–––
40
–––

Units
°C/W
g (oz)

1
01/14/02

IRG4PH50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ

VCE(ON)

VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES

Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltage
1200 —
—
V
Emitter-to-CollectorBreakdown Voltage T 18
—
—
V
Temperature Coeff. of Breakdown Voltage — 1.20 —
V/°C
— 2.56 3.5
— 2.78 3.7
Collector-to-Emitter Saturation Voltage
V
— 3.20 —
— 2.54 —
Gate Threshold Voltage
3.0
—
6.0
Temperature Coeff. of Threshold Voltage
—
-13
— mV/°C
Forward Transconductance U
23
35
—
S
—
—
250
Zero Gate Voltage Collector Current
—
—
2.0
µA
—
— 5000
Gate-to-EmitterLeakage Current
—
— ±100
nA

Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 20A
IC = 24A
VGE = 15V
See Fig.2, 5
IC = 45A
IC = 24A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 24V, TJ = 25°C
VGE = 0V, VCE = 1200V, TJ = 150°C
VGE = ±20V

Switching Characteristics @ TJ = 25°C(unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Eon
Eoff

Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise TimeTurn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss

Ets

Total Switching Loss

LE
Cies
Coes
Cres

Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

Notes:
Q Repetitive rating; VGE = 20V, pulse width limited bymax. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)

2

Typ.
160
27
53
35
15
200
290
0.53
1.41
1.94
31
18
320
280
5.40
0.35
1.43
1.78
4.56
13
3600
160
31

Max. Units
Conditions
250
IC = 24A
40
nC
VCC = 400V
See Fig. 8
83
VGE = 15V
—
—
TJ = 25°C
ns
350
IC = 24A, VCC = 960V
500
VGE = 15V, RG =...