Semiconductor

BC546/547/548/549/550

BC546/547/548/549/550
Switching and Amplifier
• High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

1

TO-92

1. Collector 2.Base 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/550 : BC548/549 Value 80 50 3065 45 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW °C °C

VCEO

Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 Emitter-Base Voltage Collector Current (DC) CollectorDissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/550

VEBO IC PC TJ TSTG

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on)fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product OutputCapacitance Input Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mAVCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=200µA f=1KHz, RG=2KΩ VCE=5V, IC=200µA RG=2KΩ, f=30~15000MHz 580 Min. 110 90 200 700 900660 300 3.5 9 2 1.2 1.4 1.4 10 4 4 3 6 700 720 Typ. Max. 15 800 250 600 mV mV mV mV mV mV MHz pF pF dB dB dB dB Units nA

hFE Classification
Classification hFE
©2000 Fairchild SemiconductorInternational

A 110 ~ 220

B 200 ~ 450

C 420 ~ 800

Rev. A, February 2000

BC546/547/548/549/550

Typical Characteristics

100

100

IC[mA], COLLECTOR CURRENT

80

IB = 350 μA IB =300 μA IB = 250 μA IB = 200 μA

IC[mA], COLLECTOR CURRENT

IB = 400 μA

VCE = 5V

10

60

40

IB = 150 μA IB = 100 μA

1

20

IB = 50 μA
0 0 2 4 6 8 10 12 14 16 18 20 0.1 0.0...